A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …
attention due to their enhanced properties such as fast operation speed, simple device …
Flexible artificial sensory systems based on neuromorphic devices
Emerging flexible artificial sensory systems using neuromorphic electronics have been
considered as a promising solution for processing massive data with low power …
considered as a promising solution for processing massive data with low power …
Conduction mechanism of valence change resistive switching memory: a survey
Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …
with the valence change mechanism (VCM). Typical modeling of valence change resistive …
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
Controllable multilevel resistive switching (RS) and neuromorphic characteristics emerges
as a promising paradigm to build power-efficient computing hardware for high density data …
as a promising paradigm to build power-efficient computing hardware for high density data …
[HTML][HTML] An overview of materials issues in resistive random access memory
Resistive random access memory (RRAM) is a very promising next generation non-volatile
RAM, with quite significant advantages over the widely used silicon-based Flash memories …
RAM, with quite significant advantages over the widely used silicon-based Flash memories …
Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics
HW Choi, KW Song, SH Kim, KT Nguyen, SB Eadi… - Scientific reports, 2022 - nature.com
The electrical properties, resistive switching behavior, and long-term potentiation/depression
(LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc …
(LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc …
Neuromorphic synapses with high switching uniformity and multilevel memory storage enabled through a Hf-Al-O alloy for artificial intelligence
Due to their high data-storage capability, oxide-based memristors with controllable
conductance properties have attracted great interest in electronic devices for high …
conductance properties have attracted great interest in electronic devices for high …
Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic …
Synaptic characteristics with tunable dependence on the voltage polarity are demonstrated
in ceria (CeO 2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking …
in ceria (CeO 2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking …
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material
Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between
Pt bottom electrode and two different top electrodes (Ti and TaN) with different work …
Pt bottom electrode and two different top electrodes (Ti and TaN) with different work …