Core–shell structured nanoenergetic materials: preparation and fundamental properties

X Ma, Y Li, I Hussain, R Shen, G Yang… - Advanced …, 2020 - Wiley Online Library
Energetic materials, including explosives, pyrotechnics, and propellants, are widely used in
mining, demolition, automobile airbags, fireworks, ordnance, and space technology …

A review of III–V nanowire infrared photodetectors and sensors

RR LaPierre, M Robson… - Journal of Physics D …, 2017 - iopscience.iop.org
Abstract A review of III–V nanowire-based infrared photodetectors is provided including
single nanowires, ensemble nanowires, and heterostructured nanowires. The performance …

Shape evolution and single particle luminescence of organometal halide perovskite nanocrystals

F Zhu, L Men, Y Guo, Q Zhu, U Bhattacharjee… - ACS …, 2015 - ACS Publications
Organometallic halide perovskites CH3NH3PbX3 (X= I, Br, Cl) have quickly become one of
the most promising semiconductors for solar cells, with photovoltaics made of these …

Towards high efficiency nanowire solar cells

G Otnes, MT Borgström - Nano Today, 2017 - Elsevier
Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …

III–V semiconductor nanowires for optoelectronic device applications

HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim… - Progress in Quantum …, 2011 - Elsevier
Semiconductor nanowires have recently emerged as a new class of materials with
significant potential to reveal new fundamental physics and to propel new applications in …

III–V nanowires and nanowire optoelectronic devices

Y Zhang, J Wu, M Aagesen, H Liu - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

B Mayer, D Rudolph, J Schnell, S Morkötter… - Nature …, 2013 - nature.com
Semiconductor nanowires are widely considered to be the next frontier in the drive towards
ultra-small, highly efficient coherent light sources. While NW lasers in the visible and …

III–V nanowire photovoltaics: Review of design for high efficiency

RR LaPierre, ACE Chia, SJ Gibson… - physica status solidi …, 2013 - Wiley Online Library
This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process

HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim… - Nano …, 2007 - ACS Publications
We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic
quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical …

Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

CPT Svensson, T Mårtensson, J Trägårdh… - …, 2008 - iopscience.iop.org
Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially
grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over …