In this work, platinum silicide formation on selected semiconductors surfaces: Si (1 0 0), Si (1
1 1), 4H-SiC (0 0 0 1) and graphene–4H-SiC (0 0 0 1), via thermal annealing and …

We present the original method for fabricating a sensitive field/charge sensor based on field
effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only …

We present a complete experimental and theoretical electronic structure study of PtSi using
a combination of synchrotron radiation photoelectron spectroscopy (SR-PES), soft x-ray …

High-temperature characteristics of the metal/Al x Ga 1− x N/GaN M/S/S (M/S/S) diodes have
been studied with current–voltage (I–V) and capacitance–voltage (C–V) measurements at …

Formation process and surface structure of platinum silicide thin layers have been studied
using scanning tunneling microscopy. The investigated structures have been grown by solid …

(57) ABSTRACT A method for fabricating a Sub-micron Structure of etch resistant
metal/semiconductor compound on a Substrate of Semiconductor material comprises the …

Comprehensive analysis of the electrical properties, structure and composition of Pt
interconnects, developed via mask-less, electron beam induced deposition of the carbon …

The fabrication of patterned arrays of sub-10 nm dots is an important research goal because
of the potential application of these structures in single-electron devices,[1, 2] photonic …

The electronic structure of PtSi was measured using synchrotron radiation-based valence
band (VB) photoelectron spectroscopy (PES). We have compared our experimental results …

We report on a study of the fabrication of submicron silicide structures with a resistless
lithography technique. Several different metals can be used as a basis for producing silicide …