FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …

This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …

The transfer characteristic at room temperature of FinFETs processed for sub-10 nm
technologies could always be explained by solving Poisson equation throughout the …

Low frequency noise studies are performed in Si/SiGe superlattice I/O n-channel FinFETs. It
was observed that the experimental noise spectra may contain additionally to flicker and …

In this paper, UTBOX nMOSFETs with different gate dielectrics have been studied based on
their low-frequency noise (LFN) performance. Since LFN measurements have been …

In this paper, DC and noise measurements on strained and unstrained SOI p-FinFETs were
performed at cryogenic temperatures (10 K) in order to evaluate the device performances …

The origin of the low-frequency noise is investigated in n-channel fin-shaped field-effect
transistors (FinFETs) in terms of the channel length and fin width. In long-channel and wide …

Low frequency noise measurements are used as a non-destructive diagnostic tool in order
to evaluate the quality of the gate oxide and the silicon film of sub-10 nm triple-gate Silicon …

Low-frequency noise has become one of the critical factors in ultra-scaled MOSFET devices,
and is also effective as an evaluating tool in characterizing device structure and reliability …

This study investigated changes in low-frequency noise sources associated with short-
channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing …