Methods and apparatuses for depositing material into high aspect ratio features, features in
a multi-laminate stack, features having positively sloped sidewalls, features having …

Provided herein are methods and apparatus for filling one or more gaps on a semiconductor
substrate. The disclosed embodiments are especially useful for forming seam-free, void-free …

Methods and apparatuses for depositing films in high aspect ratio features and trenches on
substrates using atomic layer deposition and deposition of a sacrificial layer during atomic …

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide
films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction …

Methods for depositing conformal films using a halogen-containing etchant during atomic
layer deposition are provided. Methods involve exposing a substrate to a halogen …

Methods and apparatuses for depositing films in high aspect ratio features and trenches
using a post-dose treatment operation during atomic layer deposition are provided. Post …

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide
films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction …

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic
layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of …

The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD)
processes. Conventional PEALD techniques result in films having high quality at the bottom …

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide
films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction …