Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios
Over recent years, the surge in mobile communication has deepened global connectivity.
With escalating demands for faster data rates, the push for higher carrier frequencies …
With escalating demands for faster data rates, the push for higher carrier frequencies …
Characterization of Ferroelectric Al0.7Sc0.3N Thin Film on Pt and Mo Electrodes
In the past decade, aluminum scandium nitride (AlScN) with a high Sc content has shown
ferroelectric properties, which provides a new option for CMOS-process-compatible …
ferroelectric properties, which provides a new option for CMOS-process-compatible …
Analysis of 5− 10 GHz Higher-Order Lamb Acoustic Waves in Thin-Film Scandium Aluminum Nitride
SummaryIn this work, we report a systematic analysis of acoustic waves in thin-film 30%
scandium-doped aluminum nitride (ScAlN) between 5 and 10 GHz. Higher-order Lamb …
scandium-doped aluminum nitride (ScAlN) between 5 and 10 GHz. Higher-order Lamb …
Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array
In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated
for the construction of the selector-free memory array application. The 10 nm Al0. 7Sc0. 3N …
for the construction of the selector-free memory array application. The 10 nm Al0. 7Sc0. 3N …
Editorial for special issue “Piezoelectric aluminium scandium nitride (AlScN) thin films: material development and applications in microdevices”
A Žukauskaitė - Micromachines, 2023 - mdpi.com
The enhanced piezoelectric properties of aluminum scandium nitride (Al1− xScxN or AlScN)
were discovered in 2009 by Morito Akiyama's team [1]. By introducing Sc into wurtzite AlN …
were discovered in 2009 by Morito Akiyama's team [1]. By introducing Sc into wurtzite AlN …
[HTML][HTML] Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage …
HJ Joo, SS Yoon, SY Oh, Y Lim, GH Lee, G Yoo - Electronics, 2024 - mdpi.com
The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal
(MFIM) capacitor was investigated at variable temperatures and compared with an MFM …
(MFIM) capacitor was investigated at variable temperatures and compared with an MFM …
Impact of Scaling Thickness on the Ferroelectric Properties of Pt/AlScN/Pt Capacitors
X Li, Y Fang, J Zhou, B Li, Z Wu, C Fang… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this work, the effects of reducing the thickness of Al Sc N films from 100 to 40 nm on the
ferroelectric properties of Pt/Al Sc N/Pt capacitors were investigated. As Al Sc N film …
ferroelectric properties of Pt/Al Sc N/Pt capacitors were investigated. As Al Sc N film …
Stress effect on the leakage current distribution of ferroelectric Al 0.7 Sc 0.3 N across the wafer
This study presents an investigation into the stress effect on the leakage current in
ferroelectric Al 0.7 Sc 0.3 N films by experiments and density functional theory (DFT) …
ferroelectric Al 0.7 Sc 0.3 N films by experiments and density functional theory (DFT) …
The Effect of Molybdenum Grain Characteristics on Ferroelectric Al0.7Sc0.3N Film Properties
Owing to the high coercive field of ferroelectric AlScN films, ultrathin (< 10 nm) is required for
ferroelectric AlScN memory applications. High quality ultrathin film growth depends on the …
ferroelectric AlScN memory applications. High quality ultrathin film growth depends on the …