Effect of temperature and pressure on the electronic structure of GaxIn1− xAsyP1− y alloys lattice matched to GaAs substrate
AR Degheidy, EB Elkenany - Materials chemistry and physics, 2013 - Elsevier
Based on the empirical pseudo-potential within the virtual crystal approximation including
the effective disorder potential, calculations of the electronic structure of the zinc blende …
the effective disorder potential, calculations of the electronic structure of the zinc blende …
Lattice dynamic, optical, and mechanical properties of nanostructured gallium antimonide (GaSb) semiconductor under the effect of pressure
MG Ghoniem, FA Adam, BY Abdulkhair… - Optical and Quantum …, 2023 - Springer
The optical, mechanical, and lattice dynamic properties of nanostructured GaSb
semiconductor have been determined. The influence of pressure on the Longitudinal and …
semiconductor have been determined. The influence of pressure on the Longitudinal and …
High-pressure dependence of acoustic velocities, phonon frequencies and mechanical properties of Al1− xInxN ternary alloys
EB Elkenany - Physica Scripta, 2021 - iopscience.iop.org
The phonon frequencies and the acoustic wave speeds in [100],[110], and [111] directions
for the zinc-blende Al 1− x In x N alloys have been determined. The mechanical properties of …
for the zinc-blende Al 1− x In x N alloys have been determined. The mechanical properties of …
Theoretical investigations of electronic, optical and mechanical properties for GaSb and AlSb semiconductors under the influence of temperature
EB Elkenany - Spectrochimica Acta Part A: Molecular and …, 2015 - Elsevier
In this paper we explore the effects of temperature on the electronic and mechanical
properties of GaSb and AlSb semiconductors by using the local empirical pseudo-potential …
properties of GaSb and AlSb semiconductors by using the local empirical pseudo-potential …
Temperature and pressure dependence of elastic constants and related parameters for InP semiconductor
AR Degheidy, EB Elkenany, OA Alfrnwani - Silicon, 2017 - Springer
Based on the empirical pseudo-potential method (EPM), the symmetric and anti-symmetric
pseudo-potential form factors have been adjusted to match the calculated energy gaps of …
pseudo-potential form factors have been adjusted to match the calculated energy gaps of …
Impact of temperature and pressure on mechanical properties of GaxIn1− xAsyP1− y alloy lattice matched to different substrates
AR Degheidy, EB Elkenany - Journal of Alloys and Compounds, 2015 - Elsevier
Elastic constants and their related mechanical properties of zinc-blende Ga x In 1− x As y P
1− y alloy lattice matched to different substrates (GaAs, InP, ZnSe) are calculated for various …
1− y alloy lattice matched to different substrates (GaAs, InP, ZnSe) are calculated for various …
Temperature and pressure dependence of the electronic and optical properties of GaxIn1− xAsyP1− y matching different substrates
AR Degheidy, EB Elkenany - Physica B: Condensed Matter, 2015 - Elsevier
Local pseudo-potential formalism under the virtual crystal approximation including the
effective disorder potential was applied to study the electronic and optical properties of the …
effective disorder potential was applied to study the electronic and optical properties of the …
The response of temperature and hydrostatic pressure of zinc-blende GaxIn1− xAs semiconducting alloys
AR Degheidy, EB Elkenany - Chinese physics B, 2012 - iopscience.iop.org
The electronic band structure of Ga x In 1− x As alloy is calculated by using the local
empirical pseudo-potential method including the effective disorder potential in the virtual …
empirical pseudo-potential method including the effective disorder potential in the virtual …
Pressure dependence of the electronic structure in Ge, GaP and InP semiconductors at room temperature
AR Degheidy, AM Elabsy, HG Abdelwahed… - Indian Journal of …, 2012 - Springer
The electronic structure of Ge, GaP and InP semiconductors under hydrostatic pressure
based on the empirical pseudopotential method have been reported. The pressure …
based on the empirical pseudopotential method have been reported. The pressure …
Structural and electronic properties of Si1 − x Ge x binary semiconducting alloys under the effect of temperature and pressure
AR Degheidy, EB Elkenany - Semiconductors, 2013 - Springer
Based on the empirical pseudo-potential method which incorporates compositional disorder
as an effective potential, the band structure of Si 1− x Ge x alloy are calculated for different …
as an effective potential, the band structure of Si 1− x Ge x alloy are calculated for different …