First-principle calculations have been performed to investigate the structural phase
transition, electronic, elastic, thermodynamical and optical properties of III-Sb compounds …

InGaAs/AlAsSb quantum well structures have been grown by molecular beam epitaxy
nominally lattice matched to InP substrates and characterized by photoluminescence …

This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell
temperature variation (T GaTe) on the morphological, optical, and electrical properties of …

Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb
substrates and InP substrates are demonstrated. The devices have a pBn structure that …

Abstract In 0.145 Ga 0.855 As y Sb 1− y semiconductor alloys were grown on GaSb (100)
substrates by varying the As content by liquid phase epitaxy (LPE). We demonstrated that …

Reported here are the structural and luminescent properties of ZnTe films grown on Si
substrates by metalorganic chemical vapor deposition (MOCVD). ZnO intermediate layers …

InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) hold significant potential for mid-
infrared optoelectronics. However, their optical and structural behavior at high temperatures …

We report the dependence on the excitation power and temperature of the
photoluminescence emission from a quaternary Ga0. 75In0. 25As0. 04Sb0. 96/Al0. 22Ga0 …

The results of a low-temperature (4.5 K) photoluminescence study of Te-doped GaSb layers
grown by liquid phase electroepitaxy are reported. A doubly ionizable native residual …

Reported here are some temperature-dependent and excitation-dependent
photoluminescence (PL) results from chlorine-doped ZnSe layers grown by molecular beam …