Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …
[HTML][HTML] External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy
Electronic states at GaN surfaces and at regrowth and heteroepitaxy interfaces inhibit
electronic device performance. Understanding electronic state configuration at the GaN …
electronic device performance. Understanding electronic state configuration at the GaN …
[HTML][HTML] Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy
Epitaxial regrowth of GaN pn junctions is a key technology for realization of a variety of high-
performance GaN power electronic devices. However, the regrowth process can introduce …
performance GaN power electronic devices. However, the regrowth process can introduce …
Impact of Substrate Morphology and Structural Defects in Freestanding Gallium Nitride on the Breakdown Characteristics of GaN-on-GaN Vertical Diodes
The morphology of GaN substrates grown by hydride vapor-phase epitaxy (HVPE) and by
ammonothermal methods has been correlated with reverse-bias stress testing applied to …
ammonothermal methods has been correlated with reverse-bias stress testing applied to …