A semiconductor device includes a lower electrode; an upper electrode disposed to be
spaced apart from the lower electrode; and a dielectric layer disposed between the lower …

US11227912B2 - Integrated circuit device and method of manufacturing the same - Google
Patents US11227912B2 - Integrated circuit device and method of manufacturing the same …

A semiconductor device includes a lower electrode; a supporter supporting an outer wall of
the lower electrode; a dielectric layer formed on the lower electrode and the supporter; an …

A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer
structure on the lower electrode, the dielectric layer structure including a first zirconium oxide …

A semiconductor device includes: a first electrode; a second electrode; and a multi-layered
stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned …

Semiconductor devices are provided. The semiconductor devices includes a landing pad on
a substrate, a lower electrode on the landing pad and connected to the landing pad, a …

Embodiments of the disclosure provide an integrated circuit (IC) structure. With capacitor
electrodes in different ILD layers. The structure includes a first inter-level dielectric (ILD) …

Theembodiments mayberealized byprovidinga capacitorincludingalowerelectrode a
dielectric layerstructure onthelowerelectrode. the …

Metal insulator metal capacitors are described. In an example, a capacitor includes a first
electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode …

A semiconductor device includes a substrate, first and second supporter patterns stacked
sequentially on the substrate in a first direction and spaced apart from an upper surface of …