Spinodal nanodecomposition in semiconductors doped with transition metals

T Dietl, K Sato, T Fukushima, A Bonanni, M Jamet… - Reviews of Modern …, 2015 - APS
This review presents the recent progress in computational materials design, experimental
realization, and control methods of spinodal nanodecomposition under three-and two …

Fermi-Level Pinning in ErAs Nanoparticles Embedded in III–V Semiconductors

R Hu, DQ Ho, DQ To, GW Bryant, A Janotti - Nano Letters, 2024 - ACS Publications
Embedding rare-earth monopnictide nanoparticles into III–V semiconductors enables
unique optical, electrical, and thermal properties for THz photoconductive switches, tunnel …

Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors

CC Bomberger, MR Lewis, LR Vanderhoef… - Journal of Vacuum …, 2017 - pubs.aip.org
The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for
semiconductor composites with a wide range of potential optical, electrical, and thermal …

Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy

LR Vanderhoef, AK Azad, CC Bomberger… - Physical Review B, 2014 - APS
Rare-earth materials epitaxially codeposited with III-V semiconductors form small, spherical
rare-earth-monopnictide nanoparticles embedded within the III-V host. The small size of …

[HTML][HTML] Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

R Salas, S Guchhait, SD Sifferman… - Applied Physics …, 2015 - pubs.aip.org
We explore the electrical, optical, and structural properties of fast photoconductors of In 0.53
Ga 0.47 As containing a number of different rare-earth arsenide nanostructures. The rare …

[HTML][HTML] Growth and characterization of TbAs films

CC Bomberger, BE Tew, MR Lewis… - Applied Physics Letters, 2016 - pubs.aip.org
We report on the molecular beam epitaxy growth and characterization of TbAs films. In situ
reflection high energy electron diffraction and ex situ high resolution X-ray diffraction …

Synthesis and high temperature thermoelectric properties of Yb0.25Co4Sb12-(Ag2Te)x(Sb2Te3)1−x nanocomposites

J Zheng, J Peng, Z Zheng, M Zhou, E Thompson… - Frontiers in …, 2015 - frontiersin.org
Nanocomposites are becoming a new paradigm in thermoelectric study: by incorporating
nanophase (s) into a bulk matrix, a nanocomposite often exhibits unusual thermoelectric …

[HTML][HTML] Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

R Salas, S Guchhait, KM McNicholas… - Applied Physics …, 2016 - pubs.aip.org
We explore the effects of surfactant-mediated epitaxy on the structural, electrical, and optical
properties of fast metal-semiconductor superlattice photoconductors. Specifically …

[HTML][HTML] Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

R Salas, S Guchhait, SD Sifferman, KM McNicholas… - APL Materials, 2017 - pubs.aip.org
We report the effects of the growth rate on the properties of iii-v nanocomposites containing
rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant …

[HTML][HTML] Determining the band alignment of TbAs: GaAs and TbAs: In0. 53Ga0. 47As

CC Bomberger, LR Vanderhoef, A Rahman… - Applied Physics …, 2015 - pubs.aip.org
We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and
In 0.53 Ga 0.47 As host matrices. Fluence-dependent optical-pump terahertz-probe …