Spinodal nanodecomposition in semiconductors doped with transition metals
This review presents the recent progress in computational materials design, experimental
realization, and control methods of spinodal nanodecomposition under three-and two …
realization, and control methods of spinodal nanodecomposition under three-and two …
Fermi-Level Pinning in ErAs Nanoparticles Embedded in III–V Semiconductors
Embedding rare-earth monopnictide nanoparticles into III–V semiconductors enables
unique optical, electrical, and thermal properties for THz photoconductive switches, tunnel …
unique optical, electrical, and thermal properties for THz photoconductive switches, tunnel …
Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors
CC Bomberger, MR Lewis, LR Vanderhoef… - Journal of Vacuum …, 2017 - pubs.aip.org
The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for
semiconductor composites with a wide range of potential optical, electrical, and thermal …
semiconductor composites with a wide range of potential optical, electrical, and thermal …
Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy
LR Vanderhoef, AK Azad, CC Bomberger… - Physical Review B, 2014 - APS
Rare-earth materials epitaxially codeposited with III-V semiconductors form small, spherical
rare-earth-monopnictide nanoparticles embedded within the III-V host. The small size of …
rare-earth-monopnictide nanoparticles embedded within the III-V host. The small size of …
[HTML][HTML] Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman… - Applied Physics …, 2015 - pubs.aip.org
We explore the electrical, optical, and structural properties of fast photoconductors of In 0.53
Ga 0.47 As containing a number of different rare-earth arsenide nanostructures. The rare …
Ga 0.47 As containing a number of different rare-earth arsenide nanostructures. The rare …
[HTML][HTML] Growth and characterization of TbAs films
We report on the molecular beam epitaxy growth and characterization of TbAs films. In situ
reflection high energy electron diffraction and ex situ high resolution X-ray diffraction …
reflection high energy electron diffraction and ex situ high resolution X-ray diffraction …
Synthesis and high temperature thermoelectric properties of Yb0.25Co4Sb12-(Ag2Te)x(Sb2Te3)1−x nanocomposites
J Zheng, J Peng, Z Zheng, M Zhou, E Thompson… - Frontiers in …, 2015 - frontiersin.org
Nanocomposites are becoming a new paradigm in thermoelectric study: by incorporating
nanophase (s) into a bulk matrix, a nanocomposite often exhibits unusual thermoelectric …
nanophase (s) into a bulk matrix, a nanocomposite often exhibits unusual thermoelectric …
[HTML][HTML] Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, KM McNicholas… - Applied Physics …, 2016 - pubs.aip.org
We explore the effects of surfactant-mediated epitaxy on the structural, electrical, and optical
properties of fast metal-semiconductor superlattice photoconductors. Specifically …
properties of fast metal-semiconductor superlattice photoconductors. Specifically …
[HTML][HTML] Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation
We report the effects of the growth rate on the properties of iii-v nanocomposites containing
rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant …
rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant …
[HTML][HTML] Determining the band alignment of TbAs: GaAs and TbAs: In0. 53Ga0. 47As
CC Bomberger, LR Vanderhoef, A Rahman… - Applied Physics …, 2015 - pubs.aip.org
We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and
In 0.53 Ga 0.47 As host matrices. Fluence-dependent optical-pump terahertz-probe …
In 0.53 Ga 0.47 As host matrices. Fluence-dependent optical-pump terahertz-probe …