Thickness-dependent physical and nanomechanical properties of AlxGa1− xN thin films
N Boughrara, Z Benzarti, A Khalfallah… - Materials Science in …, 2022 - Elsevier
A set of undoped Al x Ga 1− x N epilayers with different thicknesses were grown on (0001)
sapphire substrates using metal-organic chemical vapor deposition (MOCVD) technique …
sapphire substrates using metal-organic chemical vapor deposition (MOCVD) technique …
Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE
DV Nechaev, OA Koshelev, VV Ratnikov… - Superlattices and …, 2020 - Elsevier
Abstract AlN/c-Al 2 O 3 templates were grown by plasma-assisted molecular beam epitaxy
using migration enhanced epitaxy (MEE) and metal modulated epitaxy (MME) employed for …
using migration enhanced epitaxy (MEE) and metal modulated epitaxy (MME) employed for …
TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx …
O Klein, J Biskupek, K Forghani, F Scholz… - Journal of crystal …, 2011 - Elsevier
Threading dislocations (TDs) can be reduced by in-situ deposition of intermediate SiN x sub-
monolayers in group III-nitride heterostructures and their ternary alloys. Here we observe …
monolayers in group III-nitride heterostructures and their ternary alloys. Here we observe …
[PDF][PDF] Improvements of MOVPE grown (11-22) oriented GaN on prestructured sapphire substrates using a SiNx interlayer and HVPE overgrowth
M Caliebe, T Meisch, B Neuschl, S Bauer… - Phys. Status Solidi …, 2014 - uni-ulm.de
In this article two methods for improvements of (11 22) oriented semipolar GaN grown by
MOVPE on pre-structured sapphire substrates are investigated. The integration of a SiNx …
MOVPE on pre-structured sapphire substrates are investigated. The integration of a SiNx …
Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures
The size and density of nanopits, generated at the surface of their top layer, strongly affect
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …
Influence of GaN template thickness and morphology on AlxGa1− xN luminescence properties
I Halidou, A Touré, L Nguyen, A Bchetnia, B El Jani - Optical Materials, 2013 - Elsevier
We report on Al x Ga 1− x N/GaN films grown by atmospheric pressure MOVPE in a home-
made vertical reactor. The high temperature GaN template is grown using the Si/N treatment …
made vertical reactor. The high temperature GaN template is grown using the Si/N treatment …
Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE
M Bouzidi, AS Alshammari, S Soltani, I Halidou… - Materials Science and …, 2021 - Elsevier
We investigated the structural and optical properties of AlGaN films grown on SiN-treated
sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic …
sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic …
Defect reduction in Si-doped Al0. 45Ga0. 55N films by SiNx interlayer method
The dislocation density in AlGaN epitaxial layers with Al content as high as 45% grown on
sapphire substrates has been effectively reduced by introducing an in-situ deposited SiN x …
sapphire substrates has been effectively reduced by introducing an in-situ deposited SiN x …
Assessment of refractive index changes by spectral reflectance in the first stages of AlxGa1−xN layer growth using SiN treatment
Z Benzarti, M Khelifi, A Khalfallah, B El Jani - Journal of Materials Science …, 2016 - Springer
Al x Ga 1− x N films were grown using SiN treatment of sapphire substrate by metalorganic
vapor phase epitaxy in a home-made vertical reactor. Al x Ga 1− x N layer growth process …
vapor phase epitaxy in a home-made vertical reactor. Al x Ga 1− x N layer growth process …
Crack-free Al0. 5Ga0. 5N epilayer grown on SiC substrate by in situ SiNx interlayer
P Tao, H Liang, X Xia, Y Chen, C Yang, J Liu… - Materials Science in …, 2016 - Elsevier
The crystal quality and stress state of Al 0.5 Ga 0.5 N epitaxial layers on 6H-SiC wafers by
introducing an in-situ deposited SiN x nanomask layer grown by metal-organic chemical …
introducing an in-situ deposited SiN x nanomask layer grown by metal-organic chemical …