Thermal atomic layer etching (ALE) of zinc sulfide (ZnS) was demonstrated using sequential
exposures of Al (CH3) 3 (trimethylaluminum (TMA)) and HF (hydrogen fluoride). ZnS is one …

Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming
the size limitation of traditional silicon-based complementary metal-oxide-semiconductor …

The incorporation of two-dimensional (2D) semiconductors into future electronic devices will
require electronic-grade, large-scale, and cost-effective means of doping and chemical …

We demonstrate in-plane gate transistors based on the molybdenum disulfide
(MoS2)/graphene hetero-structure. The graphene works as channels while MoS2 functions …

The unique characteristic of 2D transition‐metal dichalcogenide (TMD) semiconductor
materials such as PdSe2 is the ability of the bandgap to vary on the basis of the number of …

Abstract Thin gold (Au) films (10 nm) are deposited on different substrates by using a e-
beam deposition system. Compared with sapphire and SiO2 surfaces, longer migration …

We epitaxially grew bilayer molybdenum disulfide (MoS2) on monolayer graphene by
sulfurizing a molybdenum-trioxide film (MoO3) which was deposited with thermal …

Miniaturization of electronic devices down to the nanoscale needs corresponding
processing technologies with precision at the atomic layer level. The plasma atomic layer …

摘要本論文研究目標著重在二維材料的成長及元件製作分析, 異質結構(Heterostructure)
與平面式閘極電晶體(In-plane Gate Transistor, IPGT) 應用, 主要研究材料為石墨烯(Graphene) …

We fabricate top-gate transistors on the three-layer molybdenum disulfide (MoS 2) with
three, two, and one layers in the source and drain regions using atomic layer etching (ALE) …