Dielectric surface roughness scattering induced crosstalk performance of coupled MCB interconnects
A CMOS inverter driven equivalent single conductor model of capacitively coupled mixed
CNT bundle (MCB) interconnects are taken to analyze the crosstalk induced time domain …
CNT bundle (MCB) interconnects are taken to analyze the crosstalk induced time domain …
An Analytic RLC Model for Coupled Interconnects Which Uses a Numerical Inverse Laplace Transform
M Keran, A Dounavis - IEEE Transactions on Very Large Scale …, 2023 - ieeexplore.ieee.org
In this article, a numerical inverse Laplace transform (NILT)-based algorithm is used to
efficiently approximate key characteristics of coupled high-speed VLSI interconnects, such …
efficiently approximate key characteristics of coupled high-speed VLSI interconnects, such …
Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films
L Cao, Y Zheng, Q Xue, Z Wen, L Chen… - ACS Applied …, 2022 - ACS Publications
In the current electronics industry, chip interconnect density is continuously increasing and
high-frequency communication is further developed. To effectively reduce the adverse …
high-frequency communication is further developed. To effectively reduce the adverse …
Analyzing crosstalk-induced effects in rough on-chip copper interconnects
Aggressive scaling of on-chip interconnects results in significantly higher coupling
capacitance, which results in crosstalk effects as we enter the end-of-the-roadmap era …
capacitance, which results in crosstalk effects as we enter the end-of-the-roadmap era …
High-Speed Nanoscale Interconnects
S Kumar, MK Majumder - Nanoscale Semiconductors, 2022 - api.taylorfrancis.com
In this chapter, we discuss the important role played by high-speed on-chip, that is,
nanoscale interconnects in the design of integrated circuits and systems. Losses and …
nanoscale interconnects in the design of integrated circuits and systems. Losses and …
Performance analysis of MCB-based VLSI interconnects depending on scattering induced by substrate surface roughness
An equivalent single-conductor model is developed for all possible structures of mixed
carbon nanotube bundle interconnects at the 14-nm technology node. The results are …
carbon nanotube bundle interconnects at the 14-nm technology node. The results are …