On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
[HTML][HTML] Thousands of conductance levels in memristors integrated on CMOS
Neural networks based on memristive devices,–have the ability to improve throughput and
energy efficiency for machine learning, and artificial intelligence, especially in edge …
energy efficiency for machine learning, and artificial intelligence, especially in edge …
Advanced Data Encryption using 2D Materials
Advanced data encryption requires the use of true random number generators (TRNGs) to
produce unpredictable sequences of bits. TRNG circuits with high degree of randomness …
produce unpredictable sequences of bits. TRNG circuits with high degree of randomness …
Probing nanoscale oxygen ion motion in memristive systems
Ion transport is an essential process for various applications including energy storage,
sensing, display, memory and so on, however direct visualization of oxygen ion motion has …
sensing, display, memory and so on, however direct visualization of oxygen ion motion has …
Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy
Recently, ferroelectric tunnel junctions (FTJs) have gained extensive attention as possible
candidates for emerging memory and synaptic devices for neuromorphic computing …
candidates for emerging memory and synaptic devices for neuromorphic computing …
High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors
Memristor‐based electronic memory have recently started commercialization, although its
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …
Characterization of individual charge fluctuators in Si/SiGe quantum dots
F Ye, A Ellaboudy, D Albrecht, R Vudatha… - Physical Review B, 2024 - APS
Electron spins in silicon quantum dots are excellent qubits due to their long coherence
times, scalability, and compatibility with advanced semiconductor technology. Although high …
times, scalability, and compatibility with advanced semiconductor technology. Although high …
Random telegraph noise in resistive random access memories: Compact modeling and advanced circuit design
FM Puglisi, N Zagni, L Larcher… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we report about the derivation of a physics-based compact model of random
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …
A consistent model for short-term instability and long-term retention in filamentary oxide-based memristive devices
N Kopperberg, S Wiefels, S Liberda… - … Applied Materials & …, 2021 - ACS Publications
Major challenges concerning the reliability of resistive switching random access memories
based on the valence change mechanism (VCM) are short-term instability and long-term …
based on the valence change mechanism (VCM) are short-term instability and long-term …
Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Computation-in-memory using memristive devices is a promising approach to overcome the
performance limitations of conventional computing architectures introduced by the von …
performance limitations of conventional computing architectures introduced by the von …