A review of compact modeling for phase change memory
Phase change memory (PCM) attracts wide attention for the memory-centric computing and
neuromorphic computing. For circuit and system designs, PCM compact models are …
neuromorphic computing. For circuit and system designs, PCM compact models are …
Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters
We have experimentally demonstrated a strong correlation between the electrical properties
of Zn1− xTex Ovonic threshold switching (OTS) selector device and the material properties …
of Zn1− xTex Ovonic threshold switching (OTS) selector device and the material properties …
Alleviating Conductance Nonlinearity via Pulse Shape Designs in TaOx Memristive Synapses
Analog resistive switching behavior in emerging nonvolatile memories has facilitated a wide
range of potential applications in neuromorphic computing and cognitive tasks. However …
range of potential applications in neuromorphic computing and cognitive tasks. However …
Increasing trapped carrier density in nanoscale GeSeAs Films by As ion Implantation for selector devices in 3D-Stacking Memory
G Liu, T Li, L Wu, Y Chen, B Liu, Z Ma… - ACS Applied Nano …, 2019 - ACS Publications
An ovonic threshold switching (OTS) selector based on threshold switch effect is considered
as a promising switching device for 3D-stacking memory. In this work, we put forward a safe …
as a promising switching device for 3D-stacking memory. In this work, we put forward a safe …
Modeling the gradual RESET of phase change memory with confined geometry
F Ding, Y Jiao, B Peng, H Li, W Liu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
This work develops a model of the temperature and resistance for the RESET of confined
phase change memory (PCM). The confined PCM, unlike the mushroom type, has heating …
phase change memory (PCM). The confined PCM, unlike the mushroom type, has heating …
Comprehensive phase-change memory compact model for circuit simulation
C Pigot, M Bocquet, F Gilibert, M Reyboz… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, a new continuous multilevel compact model for phase-change memory (PCM)
is proposed. It is based on the modified rate equations with the introduction of a variable …
is proposed. It is based on the modified rate equations with the introduction of a variable …
Read Disturbances in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics
D Kim, JT Jang, C Kim, HW Kim, E Hong… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Phase-change memory (PCM) connected to an additional selector has been implemented in
cross-point arrays for storage class memory applications. In the one-PCM and one-selector …
cross-point arrays for storage class memory applications. In the one-PCM and one-selector …
Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector
PC Chang, PJ Liao, DW Heh, C Lee… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
Ovonic Threshold Switching Selector faces challenges of VTH stability in intensive
applications due to relaxation and the degradation upon endurance cycling. This work …
applications due to relaxation and the degradation upon endurance cycling. This work …
Compact modeling of phase change memory with parameter extractions
A compact model of mushroom-type phase change memory (PCM) with parameter
extractions is reported in this work. General device physics of heating dynamics …
extractions is reported in this work. General device physics of heating dynamics …
Phase change memory cell with reconfigured electrode for lower reset voltage
To reduce the reset voltage and thus leakage current of the cross-point architecture of phase
change memory (PCM), a type of 1S1R cell hierarchy with reconfigured electrode capping …
change memory (PCM), a type of 1S1R cell hierarchy with reconfigured electrode capping …