Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

Energy efficient hardware implementation of artificial neural network is challenging due
the'memory-wall'bottleneck. Neuromorphic computing promises to address this challenge by …

The von Neumann bottleneck and memory wall have posed fundamental limitations in
latency and energy consumption of modern computers based on von Neumann architecture …

Defects are essential to switch the resistance states in resistive random-access memory
(RRAM) devices. Controlled defects in such devices can lead to the stabilization of the …

Summary Two-dimensional (2D) layered materials and their heterostructures have recently
been recognized as promising building blocks for futuristic brain-like neuromorphic …

Carbon can create various low-dimensional nanostructures with remarkable electronic,
optical, mechanical and thermal properties. These features make carbon nanomaterials …

Abstract 2D carbon materials are examined extensively by virtue of having functional‐
groups richness and adaptable interlayer spacing with exquisite electrochemical …

Abstract A novel vertical 3D RRAM structure with greatly improved reliability behavior is
proposed and experimentally demonstrated through basically compatible process featuring …