There is a growing trend to apply field emission (FE) electron sources in vacuum electronic
devices due to their fast response, high efficiency and low energy consumption compared to …

BECAUSE diamond surfaces terminated with hydrogen have a negative electron affinity1–4
(the conduction band minimum lies below the vacuum level), they are expected to emit …

A Critical Review of Chemical Vapor-Deposited (CVD) Diamond for Electronic Applications
Page 1 Critical Reviews in Solid State and Materials Sciences, 25(3):163-277 (2000) A Critical …

Diamond samples with varying defect densities have been synthesized by chemical vapor
deposition, and their field emission characteristics have been investigated. Vacuum electron …

Diamond is a very attractive material for micromachining: it has high mechanical hardness,
high Young's modulus, a low coefficient of friction, high thermal conductivity, and a low …

Field emission of electrons from boron‐and nitrogen‐doped diamond is compared. Emission
from boron‐doped diamond requires vacuum electric fields of 20–50 V μm− 1, while …

Diamond films and islands grown by chemical vapor deposition were implanted with boron,
sodium, and carbon ions at doses of 1014–1015/cm2. This structural modification at the …

抄録 Improving SWCNT device performance, namely, the precise control of carrier density
using organic molecules by a solution process was carried out. Controlled carrier doping of …

Experimental evidence explaining the extremely low-threshold electron emission from
diamond reported in 1996 has been obtained [K. Okano, Nature (London) 381, 140 (1996)] …

For the wafer-scale fabrication of diamond devices, the growth of diamond substrates by
heteroepitaxial chemical vapor deposition is the most promising option currently available …