Semiconductor nanowires (NWs), in particular Si NWs, have attracted much attention in the
last decade for their unique electronic properties and potential applications in several …

Efficient nanoscale photodetectors are desirable for future applications such as on-chip
optical interconnect systems. High density integration, ideally at the transistor level, requires …

Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si
core/shell nanowires epitaxially grown and integrated on a⟨ 111⟩ Si substrate were …

Recently, a compact realization of logic gates using double-gate tunnel field effect
transistors (DGTFETs) with independently-controlled gate has been proposed. The key …

Artificial synapse is basic electronic components used to prepare neuromorphic hardware
with integrated storage and computing, high speed and low energy consumption. This work …

Department of Materials Engineering Indian Institute of Science Bangalore 560012, India
have long-time outperformed amorphous silicon. However, the resolution of the present …

To date, numerous studies have been carried out to explore nanowires as new building
blocks in electronics, 1–11 photonics, 12–24 solar-cells, 25–29 batteries, 30–34 …

In this paper, a dual-gate silicon–germanium heterojunction vertical TFET with germanium
as the source material (HJ-VTFET) is proposed for realizing compact logic functions. A …

A new method of in situ electrically induced self-assembly technology combined with
electrochemical deposition has been developed for the controllable preparation of …

In this work, using calibrated 2D simulations, the authors first demonstrate that the OFF‐state
current and subthreshold swing (SS) are significantly high for the double gate Ge …