Materials for high-temperature digital electronics
Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …
technology, have changed nearly all aspects of human life from communication to …
Highly scaled GaN complementary technology on a silicon substrate
This article reports on the scaling of GaN complementary technology (CT) on a silicon
substrate to push its performance limits for circuit-level applications. The highly scaled self …
substrate to push its performance limits for circuit-level applications. The highly scaled self …
Recent Advances in III-V nitrides: Properties, Applications and Perspectives
S Li, G Li, M Zhu, Z Guo, Y Yang, H Li… - Journal of Materials …, 2024 - pubs.rsc.org
This paper reviews recent research on III–V nitrides, including their physical and chemical
properties, synthesis methods, and applications in optoelectronic devices. III–V nitrides …
properties, synthesis methods, and applications in optoelectronic devices. III–V nitrides …
Enhancement-mode GaN transistor technology for harsh environment operation
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
Dynamic Performance Analysis of Logic Gates Based on p-GaN/AlGaN/GaN HEMTs at High Temperature
R Wang, L Jia, X Gao, J He, Z Cheng… - IEEE Electron …, 2023 - ieeexplore.ieee.org
The high-temperature operation of the AlGaN/GaN high electron mobility transistors
(HEMTs) and direct-coupled FET logic (DCFL) inverters, NOR gates, and NAND gates are …
(HEMTs) and direct-coupled FET logic (DCFL) inverters, NOR gates, and NAND gates are …
Stable high temperature operation of p-GaN gate HEMT with etch-stop layer
High-temperature operation of the p-GaN gate high-electron-mobility transistor (HEMT) was
investigated, specifically up to 500° C. The p-GaN gate HEMT demonstrated stable behavior …
investigated, specifically up to 500° C. The p-GaN gate HEMT demonstrated stable behavior …
[HTML][HTML] Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate
AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other …
AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other …
[HTML][HTML] High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500° C
This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si
high electron mobility transistors (HEMTs) for high temperature applications up to 500 C …
high electron mobility transistors (HEMTs) for high temperature applications up to 500 C …
p-GaN Platform for Next-Generation GaNComplementary Transistors and Circuits
Q Xie - 2024 - dspace.mit.edu
Gallium nitride (GaN) integrated circuits (ICs) are receiving increasing attention because
they offer compactness, reduced parasitics, and higher performance compared to discrete …
they offer compactness, reduced parasitics, and higher performance compared to discrete …
High-temperature fully integrated wireless monitoring systems for aerospace applications
This paper presents a fully integrated data transmission system utilizing gallium nitride
(GaN) high-electron-mobility transistors (HEMTs). The system is specifically designed for …
(GaN) high-electron-mobility transistors (HEMTs). The system is specifically designed for …