CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …

In this paper, the correlation between line-edge roughness (LER) and line-width roughness
(LWR) is investigated. Based on the characterization methodology of auto-correlation …

Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely
observed and known to play an important role in device's lifetime. However, its …

Variability of nanometer-size devices is a major challenge for circuit design. Apart from the
as-fabricated variability, the postfabrication degradation introduces a time-dependent …

Semiconductor technology has been scaling down at an exponential rate for many decades,
yielding dramatic improvements in power, performance and cost, year after year. Today's …

Defect generation limits device lifetime and enhances its variability. Previous works mainly
addressed the generation kinetics and process. The current understanding is that the …

SRAM is vulnerable to device-to-device variation (DDV), since it uses minimum-sized
devices and requires device matching. In addition to the as-fabricated DDV at time-zero …

Traps are the defects that can capture mobile charge carriers and this article focuses on the
traps in gate dielectrics prepared on Silicon substrate, which dominates the modern …

In this paper, the impact of statistical variability on the accuracy of a propagation delay time
compact model (CM) is analyzed. Hence, we aim to select an appropriate CM and extend it …

Ubiquitous computing and the ever-rising need for energy efficiency pose challenges in
terms of the processing requirements and the corresponding machine complexity …