Current-induced torques in magnetic materials

A Brataas, AD Kent, H Ohno - Nature materials, 2012 - nature.com
The magnetization of a magnetic material can be reversed by using electric currents that
transport spin angular momentum. In the reciprocal process a changing magnetization …

Spin-torque and spin-Hall nano-oscillators

T Chen, RK Dumas, A Eklund, PK Muduli… - Proceedings of the …, 2016 - ieeexplore.ieee.org
This paper reviews the state of the art in spin-torque and spin-Hall-effect-driven nano-
oscillators. After a brief introduction to the underlying physics, the authors discuss different …

Spin-torque switching with the giant spin Hall effect of tantalum

L Liu, CF Pai, Y Li, HW Tseng, DC Ralph, RA Buhrman - Science, 2012 - science.org
Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been
proposed as a source of spin current, but its modest strength has limited its usefulness. We …

Basic principles of STT-MRAM cell operation in memory arrays

AV Khvalkovskiy, D Apalkov, S Watts… - Journal of Physics D …, 2013 - iopscience.iop.org
For reliable operation, individual cells of an STT-MRAM memory array must meet specific
requirements on their performance. In this work we review some of these requirements and …

The 2014 magnetism roadmap

RL Stamps, S Breitkreutz… - Journal of Physics …, 2014 - singtest.iopscience.iop.org
Magnetism is a very fascinating and dynamic field. Especially in the last 30 years, there have
been many major advances in a range of areas from novel fundamental phenomena to new …

Proposal for an all-spin logic device with built-in memory

B Behin-Aein, D Datta, S Salahuddin, S Datta - Nature nanotechnology, 2010 - nature.com
The possible use of spin rather than charge as a state variable in devices for processing and
storing information has been widely discussed,, because it could allow low-power operation …

Observation of the nonlocal spin-orbital effective field

X Fan, J Wu, Y Chen, MJ Jerry, H Zhang… - Nature …, 2013 - nature.com
The spin-orbital interaction in heavy nonmagnetic metal/ferromagnetic metal bilayer systems
has attracted great attention and exhibited promising potentials in magnetic logic devices …

Spin-based neuron model with domain-wall magnets as synapse

M Sharad, C Augustine… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
We present artificial neural network design using spin devices that achieves ultralow voltage
operation, low power consumption, high speed, and high integration density. We employ …

Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves

Y Fukuma, L Wang, H Idzuchi, S Takahashi… - Nature materials, 2011 - nature.com
The non-local spin injection in lateral spin valves is strongly expected to be an effective
method to generate a pure spin current for potential spintronic application. However, the …

CMOS-compatible spintronic devices: a review

A Makarov, T Windbacher, V Sverdlov… - Semiconductor …, 2016 - iopscience.iop.org
For many decades CMOS devices have been successfully scaled down to achieve higher
speed and increased performance of integrated circuits at lower cost. Today's charge-based …