Memristive technologies for data storage, computation, encryption, and radio-frequency communication
Memristive devices, which combine a resistor with memory functions such that voltage
pulses can change their resistance (and hence their memory state) in a nonvolatile manner …
pulses can change their resistance (and hence their memory state) in a nonvolatile manner …
Random bitstream generation using voltage-controlled magnetic anisotropy and spin orbit torque magnetic tunnel junctions
Probabilistic computing using random number generators (RNGs) can leverage the inherent
stochasticity of nanodevices for system-level benefits. Device candidates for this application …
stochasticity of nanodevices for system-level benefits. Device candidates for this application …
In-memory computing for machine learning and deep learning
In-memory computing (IMC) aims at executing numerical operations via physical processes,
such as current summation and charge collection, thus accelerating common computing …
such as current summation and charge collection, thus accelerating common computing …
Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications
C Jiang, J Li, H Zhang, S Lu, P Li, C Wang… - Journal of …, 2023 - iopscience.iop.org
We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access
memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX …
memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX …
Spin-transfer-torque MRAM: the next revolution in memory
DC Worledge - 2022 IEEE international memory workshop …, 2022 - ieeexplore.ieee.org
This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive
Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four …
Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four …
Picosecond spin-orbit torque–induced coherent magnetization switching in a ferromagnet
Electrically controllable nonvolatile magnetic memories show great potential for the
replacement of conventional semiconductor-based memory technologies. Here, we …
replacement of conventional semiconductor-based memory technologies. Here, we …
[HTML][HTML] Experimental demonstration of magnetic tunnel junction-based computational random-access memory
The conventional computing paradigm struggles to fulfill the rapidly growing demands from
emerging applications, especially those for machine intelligence because much of the …
emerging applications, especially those for machine intelligence because much of the …
[图书][B] Semiconductor Memory Devices and Circuits
S Yu - 2022 - taylorfrancis.com
This book covers semiconductor memory technologies from device bit-cell structures to
memory array design with an emphasis on recent industry scaling trends and cutting-edge …
memory array design with an emphasis on recent industry scaling trends and cutting-edge …
Smart Hammering: A practical method of pinhole detection in MRAM memories
As we move toward the commercialization of Spin-Transfer Torque Magnetic Random
Access Memories (STT-MRAM), cost-effective testing and in-field reliability have become …
Access Memories (STT-MRAM), cost-effective testing and in-field reliability have become …
[HTML][HTML] Optimization of a spin-orbit torque switching scheme based on micromagnetic simulations and reinforcement learning
RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr… - Micromachines, 2021 - mdpi.com
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile
magnetoresistive random access memory. It combines high-speed operation with excellent …
magnetoresistive random access memory. It combines high-speed operation with excellent …