Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical
properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are …
properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are …
Current-voltage characteristics of 4 MeV proton-irradiated silicon diodes at room temperature
JO Bodunrin, SJ Moloi - Silicon, 2022 - Springer
A change in current-voltage (IV) behaviour of the p-Si-based diodes as a result of 4 MeV
proton-irradiation to the fluence of 1016 p/cm− 2 was investigated using IV techniques at …
proton-irradiation to the fluence of 1016 p/cm− 2 was investigated using IV techniques at …
Changes in electrical properties and conduction mechanisms of Pd/n-Si diodes due to niobium dopant
MJ Thebe, SJ Moloi, M Msimanga - Materials Science and Engineering: B, 2021 - Elsevier
A change in electrical properties of silicon (Si) diodes due to niobium (Nb) doping was
studied using current–voltage (IV) and capacitance–voltage (CV) techniques. The observed …
studied using current–voltage (IV) and capacitance–voltage (CV) techniques. The observed …
Self-powered visible transparent Cu/Zn 1-x Sn x O Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering
Abstract Visible transparent Cu/n-ZnO and Cu/Zn 1-x Sn x O x= 0.14 TZO, Schottky junctions
were successfully fabricated on ITO-coated glass substrates via direct current magnetron …
were successfully fabricated on ITO-coated glass substrates via direct current magnetron …
Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP
K Shanthi Latha, V Rajagopal Reddy - Indian Journal of Physics, 2017 - Springer
The electrical and transport properties of a fabricated bilayer Ru/Cr/n-InP Schottky diode
(SD) have been investigated at different annealing temperatures. Atomic force microscopy …
(SD) have been investigated at different annealing temperatures. Atomic force microscopy …
The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method
FE Cimilli Çatır - physica status solidi (a), 2020 - Wiley Online Library
Ti/GO/n‐InP Schottky barrier diode (SBD) is obtained by growing graphene oxide (GO) film
on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of …
on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of …
[PDF][PDF] The Structural, Optical, and Electrical Characterization of Ti/n-InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method
FEC Catir - PHYSICA STATUS SOLIDI A-APPLICATIONS AND …, 2020 - researchgate.net
Recently, among the carbon nanomaterials, graphene and graphene oxide (GO) have
received significant attention by researchers. Although graphene has extraordinary …
received significant attention by researchers. Although graphene has extraordinary …
Electronic properties and lateral inhomogeneous barrier heights of n-InP rods/p-Si heterojunction prepared by liquid phase epitaxy
EM El-Menyawy, A Ashery, MM El-Nahass - Journal of Materials Science …, 2017 - Springer
Abstract In/n-InP/p-Si/Al heterojunction has been manufactured by depositing InP layer onto
p-Si single crystal substrates by liquid phase epitaxy (LPE) technique. InP layers was found …
p-Si single crystal substrates by liquid phase epitaxy (LPE) technique. InP layers was found …