Selective-area epitaxy is highly successful in producing application-ready size-
homogeneous arrays of III–V nanowires without the need to use metal catalysts. Previous …

Rubber materials are the key components of flexible optoelectronic devices, especially for
the light-emitting diodes based on arrays of inorganic nanowires (NWs). This paper reports …

In this work, we give a detailed overview of theoretical methods used for modeling the vapor–
liquid–solid (VLS) growth of III–V semiconductor nanowires. We emphasis the importance of …

We present experimental results showing how the growth rate, morphology and crystal
structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic …

Direct bandgap wurzite (WZ) GaP nanowires (NWs) are projected as a non-nitride solution
to the green gap in the LED technology. Here, we report on the growth of 5 μm long pure WZ …

InGaN/GaN multiple quantum well (MQW) truncated pyramids with multiwavelength
emission were successfully fabricated by means of a simple and low-cost regrowth method …

We report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111)
B substrates by metal organic molecular beam epitaxy following the selective area vapor …

GaAs-InGaAs-GaAs core–shell–shell nanowire (NW) structures were grown by gas source
molecular beam epitaxy using the selective-area, self-assisted, vapor–liquid–solid method …

The early stage of growth of semiconductor nanowires is studied in the case where the
sidewall adatoms have a short diffusion length due to a strong desorption. Experimental …

This paper studied fractal characteristics of messily grown nanowire morphologies using
Monte Carlo simulations and fractal geometry. Herein, the simulated morphologies were …