Effect of curie temperature on electrical parameters of NC-FinFET and digital switching application of NC-FinFET
Power consumption of the device enhances as temperature rises, degrading the
performance of conventional MOSFET. In the present paper the performance parameters of …
performance of conventional MOSFET. In the present paper the performance parameters of …
DC to AC Analysis of HC vs. BTI damage in N-EDMOS used in Single Photon Avalanche Diode cell
H Pitard, A Bravaix, X Federspiel, R Fillon… - Microelectronics …, 2023 - Elsevier
Abstract N-channel Extended Drain Metal Oxide Semiconductor (EDMOS) device is
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …
Understanding and modeling opposite impacts of self-heating on hot-carrier degradation in n-and p-channel transistors
We extend our framework for hot-carrier degradation (HCD) modeling by covering the
impact of self-heating (SH) on HCD. This impact is threefold:(i) perturbation of carrier …
impact of self-heating (SH) on HCD. This impact is threefold:(i) perturbation of carrier …
Device Reliability to Circuit Qualification: Insights and Challenges
F Cacho, A Bravaix, TG Seybou, H Pitard… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
Aging phenomena are first evidenced at device level to cell level considering a precise
knowledge of the leading degradation mechanisms and interactions useful for processing …
knowledge of the leading degradation mechanisms and interactions useful for processing …
Design of low power multiplier with less area using quaternary carry increment adder for new-fangled processors
K Gavaskar, D Malathi, G Ravivarma… - Wireless Personal …, 2023 - Springer
Multiplication is one of the most basic processes, in digital signal processing applications.
To process the instructions, most processors require multiplication. Because multipliers are …
To process the instructions, most processors require multiplication. Because multipliers are …
Monitoring the Temperature of a Nanowire SOI MOSFET Using a Neighbor PIN Diode
FRG Carnielli, MA Pavanello - 2023 37th Symposium on …, 2023 - ieeexplore.ieee.org
This paper discusses an alternative method to monitor a nanowire SOI MOSFET
temperature rise caused by the self-heating effect using a neighbor gated PIN diode. The …
temperature rise caused by the self-heating effect using a neighbor gated PIN diode. The …
Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode
FRG Carnielli, MA Pavanello - Journal of Integrated Circuits and Systems, 2024 - jics.org.br
This paper outlines a technique for measuring the temperature rise in a nanowire SOI
MOSFET, caused by the self-heating effect, utilizing a parallel gated PIN diode. The analysis …
MOSFET, caused by the self-heating effect, utilizing a parallel gated PIN diode. The analysis …