A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …
(ICs) in semiconductor industry has motivated to research community towards the …
Design optimization of three-stacked nanosheet FET from self-heating effects perspective
Self-heating effect (SHE) is a severe issue arising in the nanoscale field-effect transistors
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET
The reliability of the CMOS devices is severely affected due to the presence of interface (S
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET
Temperature plays a decisive role in semiconductor device performance and reliability
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
Attaining the ferroelectric (FE) polarization in a thin HfO 2 layer using a specific dopant is a
widely adopted way to realize Negative Capacitance (NC) FET. In a general TCAD …
widely adopted way to realize Negative Capacitance (NC) FET. In a general TCAD …
A comprehensive analysis of nanosheet FET and its CMOS circuit applications at elevated temperatures
NA Kumari, P Prithvi - Silicon, 2023 - Springer
Abstract The Nanosheet Field Effect Transistor (NSFET) has been shown to be a viable
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
Substrate BOX engineering to mitigate the self-heating induced degradation in nanosheet transistor
The continued scaling of 3D transistors into the ultra-scaled-down nanoscale regime causes
self-heating effect (SHE) driven thermal deterioration. Particularly in silicon-on-insulator …
self-heating effect (SHE) driven thermal deterioration. Particularly in silicon-on-insulator …
Investigation of thermal stress effects on subthreshold conduction in nanoscale p-FinFET from Multiphysics perspective
The rising temperature due to a self-heating or thermal environment not only degrades the
subthreshold performance but also intensifies thermal stress, posing a severe challenge to …
subthreshold performance but also intensifies thermal stress, posing a severe challenge to …
Self-Heating Effect in a MoS2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer
The inefficient heat dissipation in two-dimensional (2D) semiconductor-based field-effect
transistors (FETs) hampers their electrical performance and reliability. In this study, we …
transistors (FETs) hampers their electrical performance and reliability. In this study, we …
Thermal contact resistance on cylindrical flux channel with high contact ratio
Z Wang, L Chen, W Yuan, W Xu, P Yan - Applied Thermal Engineering, 2024 - Elsevier
This paper considers the resistance to the heat flow between two thick solids with a high
contact ratio in a vacuum. Based on the least-action principle, we derive closed-form …
contact ratio in a vacuum. Based on the least-action principle, we derive closed-form …