[HTML][HTML] Advances in Modeling and Suppression Methods of EMI in Power Electronic Converters of Third-Generation Semiconductor Devices

X Wu, X Gao, J Wang, Z Li, S Du, S Gao, F Li, J Du… - Electronics, 2023 - mdpi.com
With the development of high-frequency, miniaturized, and lightweight power electronic
devices, third-generation semiconductor devices are more and more used in the main …

Piecewise analytical transient model for power switching device commutation unit

B Shi, Z Zhao, Y Zhu - IEEE Transactions on Power Electronics, 2018 - ieeexplore.ieee.org
Taking switching transients of switching devices into consideration in design and simulation
of power electronic systems has long been a huge obstacle. Sufficient accuracy has to be …

An electrical transient model of IGBT-diode switching cell for power semiconductor loss estimation in electromagnetic transient simulation

Y Xu, CNM Ho, A Ghosh… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
An electrical transient model (ETM) of insulated-gate bipolar transistor (IGBT)-diode
switching cell is developed by coupling a temperature-dependent IGBT model with power …

Multi-physics coupling analysis of high-power IGBT module bonding wires fault considering stray inductance of main circuit

Y Wang, X Rong, C Yang, H Shi, J Zheng - Microelectronics Reliability, 2023 - Elsevier
The insulated gate bipolar transistor (IGBT) module is subjected to unbalanced electric-
thermal stress for a long time due to its own turn-on and turn-off, the fluctuation of processing …

Lifetime prediction of IGBT modules in suspension choppers of medium/low-speed maglev train using an energy-based approach

X Yang, Z Lin, J Ding, Z Long - IEEE Transactions on Power …, 2018 - ieeexplore.ieee.org
Maglev trains attracted to suspend above tracks without mechanical contact is a promising
type of track transportation. Suspension choppers with levitation magnets resembling …

A transient 3-D thermal modeling method for IGBT modules considering uneven power losses and cooling conditions

J Wang, W Chen, L Wang, B Wang… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Junction temperature is a key parameter for the safe operation of power semiconductor
devices in power electronic systems. However, it is difficult to forecast the accurate thermal …

Chip-level electrothermal stress calculation method of high-power IGBT modules in system-level simulation

J Wang, W Chen, Y Wu, J Zhang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Although with good robustness, insulated gate bipolar transistor (IGBT) modules suffer from
catastrophic failures due to excessive electrothermal stress in field use. In view of the …

[HTML][HTML] A high-precision adaptive thermal network model for monitoring of temperature variations in insulated gate bipolar transistor (IGBT) modules

N An, M Du, Z Hu, K Wei - Energies, 2018 - mdpi.com
This paper proposes a novel method for optimizing the Cauer-type thermal network model
considering both the temperature influence on the extraction of parameters and the errors …

Monitoring initial solder layer degradation in a multichip IGBT module via combined TSEPs

J Yang, Y Che, L Ran, M Du, H Jiang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
With the development of high power converters, the safe operation of large IGBT modules
with parallel chips is of increasing importance. In a multichip module, uneven solder layer …

Programmable transcranial magnetic stimulation: A modulation approach for the generation of controllable magnetic stimuli

MM Sorkhabi, M Benjaber, K Wendt… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
Objective: A transcranial magnetic stimulation system with programmable stimulus pulses
and patterns is presented. The stimulus pulses of the implemented system expand beyond …