Ultraviolet and visible photo-response of transparent conductive Al-doped ZnO (AZO)/n-Silicon isotype heterojunction device

BC Şakar, Z Orhan, F Yıldırım… - Journal of Physics D …, 2022 - iopscience.iop.org
In this work, the electrical and photoresponse measurements of a transparent conductive Al-
doped ZnO (AZO)/n-Si heterojunction device were conducted in visible light and UV …

ZnO micro/nanorods: their performance in the photocatalytic degradation and photodiode

M Yilmaz, C Cirak, N Canpolat, S Aydogan - Applied Physics A, 2023 - Springer
In this study, ZnO micro/nanorods were grown on both glass and p-Si substrates by a simple
and applicable homemade chemical spray pyrolysis method. X-ray diffraction (XRD) and …

The characterization of amorphous AZO-n/Si-p hetrojunction diode for solar cell application

S Hosseini, L Dejam, H Elahi - Optical and Quantum Electronics, 2022 - Springer
The aim of the present study is to verify the effect of annealing temperature variation on zinc
oxide doped with aluminum thin films deposited on p-type silicon substrates. Here, all thin …

Photoelectric and electrochemical performance of Al-doped ZnO thin films hydrothermally grown on graphene-coated polyethylene terephthalate bilayer flexible …

W Wang, T Ai, W Li, R Jing, Y Fei… - The Journal of Physical …, 2017 - ACS Publications
Al-doped zinc oxide thin films with Al content in the range of 0–15% were synthesized on
graphene-coated polyethylene terephthalate (PET–GR) flexible substrates by a …

Effect of annealing temperature on ZnO: Al/p-Si heterojunctions

N Baydogan, O Karacasu, H Cimenoglu - Thin Solid Films, 2012 - Elsevier
Al-doped, zinc oxide (ZnO: Al) films with a 1.2 at.% Al concentration were deposited on p-
type silicon wafers using a sol–gel dip coating technique to produce a ZnO: Al/p-Si …

An insight into the low doping efficiency of Al in sol–gel-derived ZnO: Al films: role of the dopant chemical state

MW Zhu, HB Ma, PH Jin, YN Jin, N Jia, H Chen… - Applied Physics A, 2020 - Springer
We prepared aluminum-doped zinc oxide (ZnO: Al, AZO) films by a sol–gel method and
investigated the effect of doping on the electrical properties of AZO films in the Al doping …

Annealing ambient effect on electrical properties of ZnO: Al/p-Si heterojunctions

O Urper, O Karacasu, H Cimenoglu… - Superlattices and …, 2019 - Elsevier
Aluminum doped zinc oxide (ZnO: Al) thin films via 1.2 at.% Al content was deposited on p-
type silicon wafers by using sol-gel dip coating technique to compare the effect of post …

Refractive index and extinction coefficient of ZnO: Al thin films derived by sol-gel dip coating technique

N Baydogan, T Ozdurmusoglu… - Defect and Diffusion …, 2013 - Trans Tech Publ
Refractive Index and Extinction Coefficient of ZnO:Al Thin Films Derived by Sol-Gel Dip Coating
Technique Page 1 Refractive Index and Extinction Coefficient of ZnO:Al Thin Films Derived by …

Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications

M Maache, T Devers, A Chala - Semiconductors, 2017 - Springer
Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room
temperature. As a starting material, zinc acetate was used. The dopant source was …

Experimental and simulated study of electrical behaviour of ZnO film deposited on Al substrate for device applications

P Pattanaik, SK Kamilla, DP Das, DK Mishra - Journal of Materials Science …, 2014 - Springer
In this paper, zinc oxide (ZnO) film has been deposited on Al substrate by chemical wet and
dry technique which is just a simple modified version of the dip coating method. In this …