Si–Ge–Sn alloys: From growth to applications

S Wirths, D Buca, S Mantl - Progress in crystal growth and characterization …, 2016 - Elsevier
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

Lasing in direct-bandgap GeSn alloy grown on Si

S Wirths, R Geiger, N Von Den Driesch, G Mussler… - Nature …, 2015 - nature.com
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently,
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …

Optically pumped GeSn microdisk lasers on Si

D Stange, S Wirths, R Geiger, C Schulte-Braucks… - ACS …, 2016 - ACS Publications
The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

Thermal transport properties of GaN with biaxial strain and electron-phonon coupling

DS Tang, GZ Qin, M Hu, BY Cao - Journal of Applied Physics, 2020 - pubs.aip.org
Strain inevitably exists in practical GaN-based devices due to the mismatch of lattice
structure and thermal expansion brought by heteroepitaxial growth and band engineering …

Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge (Sn) materials for micro-and nanophotonics

R Chen, S Gupta, YC Huang, Y Huo, CW Rudy… - Nano …, 2014 - ACS Publications
We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0. 92Sn0.
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …

Advanced GeSn/SiGeSn group IV heterostructure lasers

N von den Driesch, D Stange, D Rainko… - Advanced …, 2018 - Wiley Online Library
Growth and characterization of advanced group IV semiconductor materials with CMOS‐
compatible applications are demonstrated, both in photonics. The investigated …

Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

D Stange, S Wirths, N von den Driesch, G Mussler… - ACS …, 2015 - ACS Publications
A comprehensive study of optical transitions in direct-bandgap Ge0. 875Sn0. 125 group IV
alloys via photoluminescence measurements as a function of temperature, compressive …

Strained Si and SiGe nanowire tunnel FETs for logic and analog applications

QT Zhao, S Richter, C Schulte-Braucks… - IEEE Journal of the …, 2015 - ieeexplore.ieee.org
Guided by the Wentzel-Kramers–Brillouin approximation for band-to-band tunneling (BTBT),
various performance boosters for Si TFETs are presented and experimentally verified. Along …

Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics

BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee… - ACS …, 2018 - ACS Publications
The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon
photonics application to overcome the limitation of group IV semiconductors. In this paper …

Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics

D Grützmacher, O Concepción, QT Zhao, D Buca - Applied Physics A, 2023 - Springer
Abstract Si–Ge–Sn alloys are offering unusual material properties with a strong potential to
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …