Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Lasing in direct-bandgap GeSn alloy grown on Si
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently,
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …
Optically pumped GeSn microdisk lasers on Si
The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …
demand of low power consumption requires new ways of data communication. Photonic …
Thermal transport properties of GaN with biaxial strain and electron-phonon coupling
Strain inevitably exists in practical GaN-based devices due to the mismatch of lattice
structure and thermal expansion brought by heteroepitaxial growth and band engineering …
structure and thermal expansion brought by heteroepitaxial growth and band engineering …
Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge (Sn) materials for micro-and nanophotonics
We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0. 92Sn0.
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …
Advanced GeSn/SiGeSn group IV heterostructure lasers
N von den Driesch, D Stange, D Rainko… - Advanced …, 2018 - Wiley Online Library
Growth and characterization of advanced group IV semiconductor materials with CMOS‐
compatible applications are demonstrated, both in photonics. The investigated …
compatible applications are demonstrated, both in photonics. The investigated …
Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys
A comprehensive study of optical transitions in direct-bandgap Ge0. 875Sn0. 125 group IV
alloys via photoluminescence measurements as a function of temperature, compressive …
alloys via photoluminescence measurements as a function of temperature, compressive …
Strained Si and SiGe nanowire tunnel FETs for logic and analog applications
QT Zhao, S Richter, C Schulte-Braucks… - IEEE Journal of the …, 2015 - ieeexplore.ieee.org
Guided by the Wentzel-Kramers–Brillouin approximation for band-to-band tunneling (BTBT),
various performance boosters for Si TFETs are presented and experimentally verified. Along …
various performance boosters for Si TFETs are presented and experimentally verified. Along …
Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon
photonics application to overcome the limitation of group IV semiconductors. In this paper …
photonics application to overcome the limitation of group IV semiconductors. In this paper …
Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics
Abstract Si–Ge–Sn alloys are offering unusual material properties with a strong potential to
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …