We review the design, fabrication, and characterization of 1.55-/spl mu/m lattice-matched
vertical-cavity surface-emitting lasers, operating continuous wave up to 88/spl deg/C. For …

4,445,218 A 4, 1984 Coldren 4,608,697 A 8, 1986 Coldren 4,622,672 A 11, 1986 Coldren et
al. 4,829,347 A 5/1989 Cheng et al. 4,873,696 A 10, 1989 Coldren et al. 4,896.325 A 1/1990 …

The contents of this application are related to those provisional applications having Ser.
Nos. 60/227,165, 60/227,161, and 60/226,866, filed Aug. 22, 2000, and a provisional …

A tunnel junction for intradevice contacts on GaSb substrates has been realized. By using
solid source molecular beam epitaxy, we have fabricated abrupt, heavily doped homo-and …

(57) ABSTRACT A vertical cavity surface emitting laser (VCSEL) includes a Semiconductor
device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding …

Provided is a semiconductor optical device having a current-confined structure. The device
includes a first semiconductor layer of a first conductivity type which is formed on a …

We report, for the first time, InP-based all-epitaxially grown 1.3-μm vertical-cavity surface-
emitting lasers with lattice-matched Sb-based distributed Bragg reflectors and AlInAs etched …

(57) ABSTRACT A method for aperturing a vertical-cavity Surface-emitting laser (VCSEL), for
increasing the external quantum effi ciency and decreasing the threshold current, involves …

Quantum wells and associated barriers layers can be grown to include nitrogen (N),
aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a …

We investigate the physics of an internal device for a high-performance, vertical-cavity
surface-emitting laser operating at 1.305 μ m. Experimental results are analyzed using as …