A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-
based ultrathin layers, this family of materials continues to elicit interest. There is ample …

From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …

In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric
polarization, which offers significant promise for nonvolatile memories. In particular …

Brain-inspired neuromorphic computing has been intensively studied due to its potential to
address the inherent energy and throughput limitations of conventional Von-Neumann …

Among currently available energy storage (ES) devices, dielectric capacitors are optimal
systems owing to their having the highest power density, high operating voltages, and a long …

Ferroelectric HfO2 is a promising material for new memory devices, but significant
improvement of its important properties is necessary for practical application. However …