Lanthanide rare earth oxide thin film as an alternative gate oxide
An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …
integrated circuits will increase exponentially every two to three years as predicted by …
[PDF][PDF] Hf-Based High-κ Dielectrics: A Review.
Silicon oxide has been utilized as gate dielectric material for over 40 years [1]. However,
progressive minimization of transistor dimensions requires the gate oxide layers with very …
progressive minimization of transistor dimensions requires the gate oxide layers with very …
Dielectric engineered tunnel field-effect transistor
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance
steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics …
steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics …
Saving Moore's law down to 1 nm channels with anisotropic effective mass
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last
four decades. However, scaling channel lengths beyond 10 nm has become exceptionally …
four decades. However, scaling channel lengths beyond 10 nm has become exceptionally …
Circuit level analysis of a dual material graded channel (DMGC) cylindrical gate all around (CGAA) FET at nanoscale regime
PK Mudidhe, BR Nistala - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
Gate-all around (GAA) device is one of the cutting-edge technologies in the present
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
The lattice vibration, mechanical anisotropy, stress-strain behavior and electronic properties of HfxSiy phases: A first-principles study
C Li, X Zhang, F Wang - Vacuum, 2023 - Elsevier
The lattice vibrations, elastic anisotropy, electronic properties and stress-strain behavior of
Hf x Si y phases were predicted using a first-principles calculations. The enthalpies of …
Hf x Si y phases were predicted using a first-principles calculations. The enthalpies of …
Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulation
This paper proposes a 2-D investigative model for fully depleted dual-material-double-gate
(DMDG) metal–oxide–semiconductor-field-effect-transistor (MOSFET) for surface potential …
(DMDG) metal–oxide–semiconductor-field-effect-transistor (MOSFET) for surface potential …
Dramatic impact of dimensionality on the electrostatics of PN junctions and its sensing and switching applications
Low-dimensional material systems provide a unique set of properties useful for solid-state
devices. The building block of these devices is the pn junction. In this paper, we present a …
devices. The building block of these devices is the pn junction. In this paper, we present a …
An accurate model for threshold voltage analysis of dual material double gate metal oxide semiconductor field effect transistor
In this article, an accurate representation of threshold voltage for double metal double gate
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …
Electrical and thermal performances of omega-shaped-gate nanowire field effect transistors for low power operation
In this paper, we proposed Omega-Shaped-Gate Nanowire Field Effect Transistor
(ONWFET) with different gate coverage ratio (GCR). In order to investigate electrical and self …
(ONWFET) with different gate coverage ratio (GCR). In order to investigate electrical and self …