A state-of-art review on gallium oxide field-effect transistors
As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …
recently aroused increasing attention in the area for high-power electronics, power switch for …
A review on synthesis and applications of gallium oxide materials
Abstract Gallium oxide (Ga 2 O 3), as a new kind of ultra− wide band gap semiconductor
material, is widely studied in many fields, such as power electronics, UV− blind …
material, is widely studied in many fields, such as power electronics, UV− blind …
[HTML][HTML] β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
This paper presents a new β-Ga 2 O 3 Junctionless double gate Metal-Oxide-Field-
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
In this study, we analyze a β-Ga2O3 gate-all-around nanowire junctionless transistor (β-GAA-
JLT) in accumulation mode. The performances are investigated by considering quantum …
JLT) in accumulation mode. The performances are investigated by considering quantum …
Investigation of junctionless fin-FET characterization in deep cryogenic temperature: DC and RF analysis
D Madadi - IEEE Access, 2022 - ieeexplore.ieee.org
This work presents the SOI Junctionless Fin-FET characterization in Deep Cryogenic
behavior (DC-JLFET). Results show that the JLT device is well-suited for various operations …
behavior (DC-JLFET). Results show that the JLT device is well-suited for various operations …
Realization of Double‐Gate Junctionless Field Effect Transistor Depletion Region for 6 nm Regime with an Efficient Layer
Herein, the authors suggest a junctionless field effect transistor with an embedded p‐type
layer (EPL‐JLT) near the drain channel side, employing calibrated structure simulations to …
layer (EPL‐JLT) near the drain channel side, employing calibrated structure simulations to …
β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode
D Madadi - Silicon, 2022 - Springer
In this paper, we present a solution for understanding volume depletion and essentially
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements
In our work, we demonstrate a 4H-SiC gate-all-around cylindrical nanowire junctionless
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
An embedded β-Ga2O3 layer in a SOI-LDMOS to improve breakdown voltage
In this work, we present a novel silicon-on-insulator (SOI) laterally diffused metal–oxide–
semiconductor (LDMOS) using β-Ga2O3 material (β-SOI-LDMOS) as a wide-bandgap …
semiconductor (LDMOS) using β-Ga2O3 material (β-SOI-LDMOS) as a wide-bandgap …
Improvement of a novel SOI-MESFET with an embedded GaN layer for high-frequency operations
In this paper, we propose a novel Silicon on Insulator (SOI) Metal Semiconductor Field Effect
Transistor (MESFET) with an embedded GaN layer (GL-SOI-MESFET) for modifying the …
Transistor (MESFET) with an embedded GaN layer (GL-SOI-MESFET) for modifying the …