Characterization study of deep-level defect spatial distribution, emission mechanisms, and structural identification
Z Wang, J Yang, H Li - Journal of Physics D: Applied Physics, 2024 - iopscience.iop.org
The characterization of defects in semiconductor materials and devices is crucial for
enhancing the performance and reliability of semiconductor products. This tutorial review …
enhancing the performance and reliability of semiconductor products. This tutorial review …
Deep-level transient spectroscopy of GaAs/AlGaAs multi-quantum wells grown on (100) and (311) B GaAs substrates
Abstract Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam
epitaxy on (100) and (311) B GaAs substrates have been studied by using conventional …
epitaxy on (100) and (311) B GaAs substrates have been studied by using conventional …
Etude des défauts électriquement actifs dans les matériaux des capteurs d'image CMOS
F Domengie - 2011 - theses.hal.science
La taille des pixels des capteurs d'image CMOS approche aujourd'hui lemicron. Dans ce
contexte, le courant d'obscurité reste un paramètrecritique. Il se superpose au courant …
contexte, le courant d'obscurité reste un paramètrecritique. Il se superpose au courant …