Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: A review

H Oh, B Han, P McCluskey, C Han… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven
largely by the increasing demand for an efficient way to control and distribute power in the …

Evaluation of Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling

V Smet, F Forest, JJ Huselstein… - IEEE Transactions …, 2012 - ieeexplore.ieee.org
The supervision of semiconductor power devices in operation demonstrates an obvious
interest to improve the operating safety of electronic power converters used in critical …

In Situ Diagnostics and Prognostics of Solder Fatigue in IGBT Modules for Electric Vehicle Drives

B Ji, X Song, W Cao, V Pickert, Y Hu… - … on Power Electronics, 2014 - ieeexplore.ieee.org
This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the
health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the …

Instabilities in silicon power devices: A review of failure mechanisms in modern power devices

F Iannuzzo, C Abbate, G Busatto - IEEE Industrial Electronics …, 2014 - ieeexplore.ieee.org
In the last 15 years, the global demand for power saving, efficiency, and weight, size, and
cost reduction in both the consumer and the industrial fields have strongly pushed the …

Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS

J Hu, O Alatise, JAO Gonzalez… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
Differences in the thermal and electrical switching time constants between parallel-
connected devices cause imbalances in the power and temperature distribution, thereby …

A fault detection method for partial chip failure in multichip IGBT modules based on turn-off delay time

D Luo, M Chen, W Lai, H Xia, H Li… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Multichip IGBT module has been widely used in high-power converters. Detecting the status
of the IGBT chip is a cost-effective approach to improving the reliability of power devices …

Long-term reliability of railway power inverters cooled by heat-pipe-based systems

X Perpina, X Jorda, M Vellvehi… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
This paper analyzes the impact of a nonuniform temperature distribution inside insulated-
gate bipolar transistor (IGBT) power modules on the reliability of railway power inverters …

[HTML][HTML] BP neural network for non-invasive IGBT junction temperature online detection

L Liu, Q Peng, H Jiang, L Ran, Y Wang, C Du… - Microelectronics …, 2023 - Elsevier
A number of studies have focused on Insulated Gate Bipolar Transistor (IGBT) junction
temperature prediction methods. Some methods introduce extra circuits or sensors for an …

Pulse-shadowing-based thermal balancing in multichip modules

V Ferreira, M Andresen, B Cardoso… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Multichip modules (MCM) is the standard solution for high power density in high current
applications, which contains a multiple parallel-connected semiconductor devices inside the …

Comparisons of two turn-off failures under clamped inductive load in planar FS 3.3 kV/50 A IGBT chip

J Fan, Y Wang, F He, M Gao, Z Zhao… - … on Power Electronics, 2022 - ieeexplore.ieee.org
Turn-off failure under clamped inductive load, is one of the most concerns in insulated gate
bipolar transistor (IGBT) chips. Besides, this turn-off failure can be attributed to two causes …