A charge-based analytical model for gate all around junction-less field effect transistor including interface traps
This article proposes an analytic charge-based model that incorporates interface trapping.
The model's applicability to all operating zones includes various interface trap charges with …
The model's applicability to all operating zones includes various interface trap charges with …
Modeling threshold voltage and drain-induced barrier lowering effect of opposite doping core–shell channel surrounding-gate junctionless MOSFET
L Xu, G Wu, P Li, T Cheng - Microelectronics Journal, 2023 - Elsevier
For the sake of promoting core–shell channel (CSC) junctionless (JL) MOSFET, this paper
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
Analytical Model for Cylindrical Junctionless Nanowire FETs
This paper presents an analytical model for the IV and CV characteristics of cylindrical
junctionless nanowire FETs. The obtained expressions are continuous and valid for all bias …
junctionless nanowire FETs. The obtained expressions are continuous and valid for all bias …
Modelagem compacta para transistores MOS: nanofios sem junções e canais bidimensionais
AM Souza - 2024 - teses.usp.br
â Diante da iminente saturação da Lei de Moore, a comunidade acadêmica se empenha na
exploração de alternativas ao MOSFET convencional de silício, seja inovando nos …
exploração de alternativas ao MOSFET convencional de silício, seja inovando nos …
Characteristics of a Dual-Gate Junction-less Transistor
P Bikki, A Ruchitha, P Veena… - 2023 3rd International …, 2023 - ieeexplore.ieee.org
The junctionless transistor presents a promising alternative to conventional MOSFETs due to
its simpler structure and reduced fabrication complexity, offering potential advantages in …
its simpler structure and reduced fabrication complexity, offering potential advantages in …