Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Semiconductor nanowires show promise for many device applications,,, but controlled
doping with electronic and magnetic impurities remains an important challenge …

On Si (1 1 1) and Si (0 0 1), GaN nanowires (NWs) form in a self-induced way without the
need for any external material. On sapphire, NW growth is induced by Ni collectors. Both …

We studied the doping with Si and Be of GaAs nanowires (NWRs) grown by molecular beam
epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high …

The construction of semiconductor nanocrystal (SNC)‐based composites is of fundamental
importance for various applications, including telecommunication, lasers, photovoltaics, and …

Doping semiconductor nanocrystals is crucial for enhancing and manipulating their
functional properties, but the doping mechanism and the effects of dopants on the …

Due to the characteristics of non-contact, high sensitivity and spatial resolution, nanoscale
optical thermometry is necessary in many applications such as micro/nano electronics …

High defect tolerance and versatile surface engineering of AgInS 2 (AIS) provide platforms to
design donor-band (DB) regulated Zn-alloyed AIS (ZAIS) for effective photocatalytic H 2 …

The catalyst-and self-induced pathways of GaN nanowire growth by molecular beam epitaxy
are compared. The catalyst-induced nanowires elongate faster than the self-induced ones …

Although NiO is one of the canonical functional binary oxides, there has been no report so
far on the effective fabrication of aligned single crystalline NiO nanowire arrays. Here we …