Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors
In this work, we investigated the temperature-dependent photodetection behavior of a high-
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: Progress and prospects
Due to their non-centrosymmetric crystal orientation, wurtzite III-nitride crystals have two
distinct orientations, ie III-polar and N-polar along the c-axis. Extensive effort has been …
distinct orientations, ie III-polar and N-polar along the c-axis. Extensive effort has been …
High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si
Q Lyu, H Jiang, KM Lau - Applied Physics Letters, 2020 - pubs.aip.org
We report high performance ultraviolet (UV) photodetectors (PDs) based on p-GaN-gated
AlGaN/GaN heterostructures grown on silicon substrates. Benefitting from the high electrical …
AlGaN/GaN heterostructures grown on silicon substrates. Benefitting from the high electrical …
Methods for synthesizing β-Ga2O3 thin films beyond epitaxy
J Cooke, B Sensale-Rodriguez… - Journal of Physics …, 2021 - iopscience.iop.org
Gallium oxide is an exceptional ultra-wide bandgap material. Its most stable phase, β-Ga 2
O 3, has been extensively studied and recently attracted much attention for various …
O 3, has been extensively studied and recently attracted much attention for various …
The Insertion of an AlN Spacer between the Barrier and the Channel Layer for a Polarization-Enhanced AlGaN-Based Solar-Blind Ultraviolet Detector
T Fang, K Jiang, B Wang, S Zhang, Z Xie… - ACS Applied …, 2024 - ACS Publications
The AlGaN-based solar-blind ultraviolet (SBUV) detectors have tremendous potential
applications in missile warning, secret communications, deep space exploration, etc. In this …
applications in missile warning, secret communications, deep space exploration, etc. In this …
Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode
L Guo, K Jiang, X Sun, Z Zhang, J Ben, Y Jia… - Photonics …, 2021 - opg.optica.org
AlGaN solar-blind ultraviolet (SBUV) detectors have potential application in fire monitoring,
corona discharge monitoring, or biological imaging. With the promotion of application …
corona discharge monitoring, or biological imaging. With the promotion of application …
Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure
D Chen, YC Chen, G Zeng, YC Li, XX Li… - Semiconductor …, 2022 - iopscience.iop.org
Optoelectronic performance of ultraviolet phototransistors (UVPTs) based on AlGaN/GaN
high-electron-mobility transistor (HEMT) configuration is comprehensively studied under …
high-electron-mobility transistor (HEMT) configuration is comprehensively studied under …
Al0.18Ga0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure
Y Gu, F Xie, Q Fan, X Jiang, J Guo, Z Xie… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The fabrication and comprehensive characterizations of Al Ga/GaN two-dimensional
electron gas (2DEG)-based ultraviolet (UV) photodetector (PD) with symmetrical …
electron gas (2DEG)-based ultraviolet (UV) photodetector (PD) with symmetrical …
Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior
electrical and material properties that make them ideal for the fabrication of high …
electrical and material properties that make them ideal for the fabrication of high …
Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface
AS Razeen, D Kotekar-Patil, EX Tang, G Yuan… - Materials Science in …, 2024 - Elsevier
We demonstrate the fabrication of unpatterned and nanohole patterned AlGaN/GaN High
electron mobility transistor-based metal-semiconductor-metal UV photodetectors. Device …
electron mobility transistor-based metal-semiconductor-metal UV photodetectors. Device …