Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives
Wide‐bandgap semiconductors (WBGs) are crucial building blocks of many modern
electronic devices. However, there is significant room for improving the crystal quality …
electronic devices. However, there is significant room for improving the crystal quality …
Wafer-level GaN-based nanowires photocatalyst for water splitting
K Wang, J Qiu, Z Wu, Y Liu, Y Liu, X Chen… - Chinese Chemical …, 2024 - Elsevier
In recent years, the development of wafer-level GaN nanowires photocatalyst loaded onto
silicon substrates has progressed rapidly depending on its simplicity of instrumentation …
silicon substrates has progressed rapidly depending on its simplicity of instrumentation …
Interface Properties of MoS2 van der Waals Heterojunctions with GaN
The combination of the unique physical properties of molybdenum disulfide (MoS2) with
those of gallium nitride (GaN) and related group-III nitride semiconductors have recently …
those of gallium nitride (GaN) and related group-III nitride semiconductors have recently …
Hierarchical WS2/C nanofibers with controlled interlayer spacing for high-performance sodium ion batteries
T Xiang, X Wang, Z Chen, Z Feng, F Zeng… - Journal of Alloys and …, 2023 - Elsevier
Hierarchical WS 2/C nanofibers with controllable layer spacing are prepared by
electrospinning combined with in-situ sulfurization at 800℃. The characterizations reveal …
electrospinning combined with in-situ sulfurization at 800℃. The characterizations reveal …