Three major technological lithography options have been reviewed for high volume
manufacturing at the 32 nm half pitch node: 193 nm immersion lithography with high index …

Single exposure lithography is the most cost effective means of achieving critical level
exposures, and extreme ultraviolet lithography (EUVL) is the technology that will enable this …

We are evaluating the readiness of extreme ultraviolet (EUV) lithography for insertion into
production at the 15 nm technology node by integrating it into standard semiconductor …

(57) ABSTRACT A dual epitaxial integration process for FinFET devices. First and second
pluralities offins and gates are formed, with some of the fins and gates being for NFETs and …

Extreme Ultra-Violet (EUV) lithography is the leading candidate for semiconductor
manufacturing of the 22nm technology node and beyond, due to the very short wavelength …

Today, 22nm node devices are built using 193nm immersion lithography, possibly combined
with double patterning techniques. Some stretch till the 16nm node is feasible here, using …

The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging.
Further progress requires new materials, innovative structures, and even novel device …

This paper concerns the readiness of extreme ultraviolet lithography (EUVL) for high-volume
manufacture based on accelerated development in critical areas and the construction of a …

Extreme Ultraviolet Lithography (EUVL) is currently the most promising technology for
advanced manufacturing nodes: it recently demonstrated the feasibility of 32nm and 22nm …

Extreme ultraviolet (EUV) lithography is currently the most promising technology for
advanced manufacturing nodes. This study aims to assess in detail the quality of a full chip …