Silicon quantum electronics

FA Zwanenburg, AS Dzurak, A Morello… - Reviews of modern …, 2013 - APS
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

1/f noise: Implications for solid-state quantum information

E Paladino, YM Galperin, G Falci, BL Altshuler - Reviews of Modern Physics, 2014 - APS
The efficiency of the future devices for quantum information processing is limited mostly by
the finite decoherence rates of the individual qubits and quantum gates. Recently …

Storing quantum information for 30 seconds in a nanoelectronic device

JT Muhonen, JP Dehollain, A Laucht… - Nature …, 2014 - nature.com
The spin of an electron or a nucleus in a semiconductor naturally implements the unit of
quantum information—the qubit. In addition, because semiconductors are currently used in …

Single-shot readout of an electron spin in silicon

A Morello, JJ Pla, FA Zwanenburg, KW Chan, KY Tan… - Nature, 2010 - nature.com
The size of silicon transistors used in microelectronic devices is shrinking to the level at
which quantum effects become important. Although this presents a significant challenge for …

Spectroscopy of surface-induced noise using shallow spins in diamond

Y Romach, C Müller, T Unden, LJ Rogers, T Isoda… - Physical review …, 2015 - APS
We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy
centers in diamond as a function of depth, surface coating, magnetic field and temperature …

Probing surface noise with depth-calibrated spins in diamond

BA Myers, A Das, MC Dartiailh, K Ohno… - Physical Review Letters, 2014 - APS
Sensitive nanoscale magnetic resonance imaging of target spins using nitrogen-vacancy
(NV) centers in diamond requires a quantitative understanding of dominant noise at the …

Investigation of surface magnetic noise by shallow spins in diamond

T Rosskopf, A Dussaux, K Ohashi, M Loretz… - Physical review …, 2014 - APS
We present measurements of spin relaxation times (T 1, T 1 ρ, T 2) on very shallow (≲ 5 nm)
nitrogen-vacancy centers in high-purity diamond single crystals. We find a reduction of spin …

Materials for silicon quantum dots and their impact on electron spin qubits

A Saraiva, WH Lim, CH Yang, CC Escott… - Advanced Functional …, 2022 - Wiley Online Library
Quantum computers have the potential to efficiently solve problems in logistics, drug and
material design, finance, and cybersecurity. However, millions of qubits will be necessary for …

Spin properties of very shallow nitrogen vacancy defects in diamond

BK Ofori-Okai, S Pezzagna, K Chang, M Loretz… - Physical Review B …, 2012 - APS
We investigate spin and optical properties of individual nitrogen vacancy centers located
within 1–10 nm from the diamond surface. We observe stable defects with a characteristic …

Environmental noise spectroscopy with qubits subjected to dynamical decoupling

P Szańkowski, G Ramon, J Krzywda… - Journal of Physics …, 2017 - iopscience.iop.org
A qubit subjected to pure dephasing due to classical Gaussian noise can be turned into a
spectrometer of this noise by utilizing its readout under properly chosen dynamical …