Silicon quantum electronics
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
1/f noise: Implications for solid-state quantum information
The efficiency of the future devices for quantum information processing is limited mostly by
the finite decoherence rates of the individual qubits and quantum gates. Recently …
the finite decoherence rates of the individual qubits and quantum gates. Recently …
Storing quantum information for 30 seconds in a nanoelectronic device
The spin of an electron or a nucleus in a semiconductor naturally implements the unit of
quantum information—the qubit. In addition, because semiconductors are currently used in …
quantum information—the qubit. In addition, because semiconductors are currently used in …
Single-shot readout of an electron spin in silicon
The size of silicon transistors used in microelectronic devices is shrinking to the level at
which quantum effects become important. Although this presents a significant challenge for …
which quantum effects become important. Although this presents a significant challenge for …
Spectroscopy of surface-induced noise using shallow spins in diamond
We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy
centers in diamond as a function of depth, surface coating, magnetic field and temperature …
centers in diamond as a function of depth, surface coating, magnetic field and temperature …
Probing surface noise with depth-calibrated spins in diamond
Sensitive nanoscale magnetic resonance imaging of target spins using nitrogen-vacancy
(NV) centers in diamond requires a quantitative understanding of dominant noise at the …
(NV) centers in diamond requires a quantitative understanding of dominant noise at the …
Investigation of surface magnetic noise by shallow spins in diamond
T Rosskopf, A Dussaux, K Ohashi, M Loretz… - Physical review …, 2014 - APS
We present measurements of spin relaxation times (T 1, T 1 ρ, T 2) on very shallow (≲ 5 nm)
nitrogen-vacancy centers in high-purity diamond single crystals. We find a reduction of spin …
nitrogen-vacancy centers in high-purity diamond single crystals. We find a reduction of spin …
Materials for silicon quantum dots and their impact on electron spin qubits
Quantum computers have the potential to efficiently solve problems in logistics, drug and
material design, finance, and cybersecurity. However, millions of qubits will be necessary for …
material design, finance, and cybersecurity. However, millions of qubits will be necessary for …
Spin properties of very shallow nitrogen vacancy defects in diamond
BK Ofori-Okai, S Pezzagna, K Chang, M Loretz… - Physical Review B …, 2012 - APS
We investigate spin and optical properties of individual nitrogen vacancy centers located
within 1–10 nm from the diamond surface. We observe stable defects with a characteristic …
within 1–10 nm from the diamond surface. We observe stable defects with a characteristic …
Environmental noise spectroscopy with qubits subjected to dynamical decoupling
A qubit subjected to pure dephasing due to classical Gaussian noise can be turned into a
spectrometer of this noise by utilizing its readout under properly chosen dynamical …
spectrometer of this noise by utilizing its readout under properly chosen dynamical …