An object of the present invention is to provide a polysi loxane compound that can be
developed in an aqueous alkali Solution and can yield a cured product or thin film having …

US10031420B2 - Wet-strippable silicon-containing antireflectant - Google Patents
US10031420B2 - Wet-strippable silicon-containing antireflectant - Google Patents Wet-strippable …

There is provided a resist underlayer film forming composi tion for lithography for forming a
resist underlayer film capable of being used as a hardmask. A resist underlayer film forming …

There is provided a resist underlayer film forming composi tion for lithography for forming a
resist underlayer film capable of being used as a hard mask or a bottomanti-reflec tive …

US9442377B1 - Wet-strippable silicon-containing antireflectant - Google Patents
US9442377B1 - Wet-strippable silicon-containing antireflectant - Google Patents Wet-strippable …

There is provided a resist underlayer film forming composi tion for lithography for forming a
resist underlayer film capable of being used as a hardmask. A resist underlayer film forming …

There is provided a lithographic resist underlayer film-forming composition for forming a
resist underlayer film which can be used as a hard mask. A lithographic resist underlayer …

There is provided a method of making a semiconductor device utilizing a resist underlayer
film forming composition comprising a silane compound containing an anion group. wherein …

It is an object of the present invention to provide: a curable composition that has
photocurability and provides a cured product excellent in insulating properties; and the …

The present invention relates to a method for producing a resist composition used in finer
processing in a process for producing a semiconductor apparatus including a semicon …