CMOS-compatible silicon nanowire field-effect transistor biosensor: Technology development toward commercialization

DP Tran, TTT Pham, B Wolfrum, A Offenhäusser… - Materials, 2018 - mdpi.com
Owing to their two-dimensional confinements, silicon nanowires display remarkable optical,
magnetic, and electronic properties. Of special interest has been the development of …

Electrically controlled waveguide polariton laser

DG Suárez-Forero, F Riminucci, V Ardizzone… - Optica, 2020 - opg.optica.org
Exciton–polaritons are mixed light–matter particles offering a versatile solid state platform to
study many-body physical effects. In this work, we demonstrate an electrically controlled …

Effects of vacancy defects and axial strain on thermal conductivity of silicon nanowires: A reverse nonequilibrium molecular dynamics simulation

MG Shahraki, Z Zeinali - Journal of Physics and Chemistry of Solids, 2015 - Elsevier
Thermal conductivity of silicon nanowires (SiNWs) is evaluated using the reverse
nonequilibrium molecular dynamics simulation. The Stillinger–Weber (SW) and Tersoff …

Silicon nanoparticles as contrast agents in the methods of optical biomedical diagnostics

SV Zabotnov, FV Kashaev, DV Shuleiko… - Quantum …, 2017 - iopscience.iop.org
The efficiency of light scattering by nanoparticles formed using the method of picosecond
laser ablation of silicon in water and by nanoparticles of mechanically grinded mesoporous …

Кремниевые наночастицы как контрастирующие агенты в методах оптической биомедицинской диагностики

СВ Заботнов, ФВ Кашаев, ДВ Шулейко… - Квантовая …, 2017 - mathnet.ru
Проведено сравнение эффективности рассеяния света наночастицами,
формируемыми методом пикосекундной лазерной абляции кремния в воде, и …

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

A Pacheco-Sanchez, Q Torrent… - Journal of Applied Physics, 2022 - pubs.aip.org
The potential barrier height at the interface formed by a metal contact and multiple one-
dimensional (1D) quasi-ballistic channels in field-effect transistors is evaluated across …

Hall Effect Measurements in Rotating Magnetic Field on Sub-30-nm Silicon Nanowires Fabricated by a Top–Down Approach

A Verma, K Borisov, S Connaughton… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
We present the nanofabrication and transport properties of single silicon nanowires (NWs)
having mean widths in the range from sub-30 to 500 nm. Hall effect measurements are …

Covalently Bound Gold Nanoparticle-Assisted Epitaxial Growth of Silicon Nanowires

HJ Lee, CS Park, YS Park, R Aboumourad… - Crystal Growth & …, 2020 - ACS Publications
Epitaxial growth of one-dimensional nanowires has received considerable attention for
vertically aligned nanoelectronic devices; however, high integration and reproducibility are …

Multiple contacts investigation of single silicon nanowires with the active voltage contrast scanning electron microscopy technique

A Verma, S Connaughton… - … Science and Technology, 2018 - iopscience.iop.org
A method for analysing the formation of electrical contacts to single silicon nanowires (Si
NWs) by exploiting scanning electron microscopy (SEM) images, using active secondary …

Schottky barrier height extraction of multi-channel one-dimensional FETs

A Pacheco-Sanchez, E Ramirez-Garcia… - 2020 IEEE Latin …, 2020 - ieeexplore.ieee.org
The Schottky barrier height of fabricated multi-wire and multi-carbon-nanotube field-effect
transistors is characterized here with an extraction method based on the Landauer-Biittiker …