This article describes a new wafer level capping technology for hermetic or quasi-hermetic 1
st level device sealing. The technology is based on fabrication of cap structures with bond …

Compared with traditional switches, RF MEMS switches are characterized by low power
consumption, low insertion loss, high isolation, good linearity and high integration. However …

This paper presents BiCMOS embedded RF-MEMS switch technologies for two technology
lines, the 0.25 micrometer and the 0.13 micrometer SiGe BiCMOS. The developed RF …

This paper demonstrates a high-performance double-side-processed bulk acoustic wave
(DBAW) filter designed for Wi-Fi operation, featuring a novel glass cap. We propose a new …

In the last decade, silicon germanium (SiGe) bipolar complementary metal oxide
semiconductor (BiCMOS) technologies opened a new cost-efficient market for the mm-wave …