Lanthanide rare earth oxide thin film as an alternative gate oxide

KH Goh, A Haseeb, YH Wong - Materials Science in Semiconductor …, 2017 - Elsevier
An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …

Effect of pH on the properties of eggshell-derived hydroxyapatite bioceramic synthesized by wet chemical method assisted by microwave irradiation

KW Goh, YH Wong, S Ramesh, H Chandran… - Ceramics …, 2021 - Elsevier
In the present work, the eggshell-derived hydroxyapatite (HA) powder was successfully
synthesized by a simple wet chemical method assisted by microwave irradiation. Different …

[HTML][HTML] Preparation and Property Characterization of Sm2EuSbO7/ZnBiSbO5 Heterojunction Photocatalyst for Photodegradation of Parathion Methyl under Visible …

J Luan, L Hao, Y Yao, Y Wang, G Yang, J Li - Molecules, 2023 - mdpi.com
An unprecedented photocatalyst, Sm2EuSbO7, was successfully fabricated in this paper,
through a high-temperature solid-state calcination method, which represented its first ever …

High-performance organic field-effect transistors using rare earth metal oxides as dielectrics

F Talalaev, S Luchkin, AV Mumyatov… - ACS Applied …, 2023 - ACS Publications
Rare earth metal oxides (REOs) represent promising gate dielectric materials for field-effect
transistors due to their high dielectric constants required for suppressing leakage currents in …

[HTML][HTML] Preparation and Property Characterization of Eu2SmSbO7/ZnBiEuO4 Heterojunction Photocatalysts and Photocatalytic Degradation of Chlorpyrifos under …

J Luan, Y Wang, Y Yao, L Hao, J Li, Y Cao - Catalysts, 2024 - mdpi.com
Eu2SmSbO7 and ZnBiEuO4 were synthesized for the first time using the hydrothermal
method. Eu2SmSbO7/ZnBiEuO4 heterojunction photocatalyst (EZHP) was synthesized for …

Physical and electrical characteristics of Ho2O3 thin film based on 4H-SiC wide bandgap semiconductor

KO Odesanya, TAM Onik, R Ahmad, A Andriyana… - Thin Solid Films, 2022 - Elsevier
The continuous down-sizing of metal oxide semiconductor field effect transistors have been
confronted with various challenges in the last few decades, ranging from aggressive …

Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation

TAM Onik, HF Hawari, MFM Sabri, YH Wong - Applied Surface Science, 2021 - Elsevier
A systematic study of chemical, structural and electrical properties of Sm 2 O 3 gate stack
has been carried out for RF sputtered Sm thin film on Ge substrate followed by thermal …

Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations

E Olsson, Q Cai, J Cottom, R Jakobsen… - Computational Materials …, 2019 - Elsevier
Rare earth oxides have shown great promise in a variety of applications in their own right,
and as the building blocks of complex oxides. A great deal of recent interest has been …

Effect of oxidation temperature on physical and electrical properties of ZrO2 thin-film gate oxide on Ge substrate

ZC Lei, KH Goh, NIZ Abidin, YH Wong - Thin Solid Films, 2017 - Elsevier
The effects of oxidation temperatures on metal-oxide-semiconductor characteristics of
sputtered zirconium thin films on germanium systematically investigated in an oxygen …

[HTML][HTML] Effects of Substrate Temperature on Nanomechanical Properties of Pulsed Laser Deposited Bi2Te3 Films

HP Cheng, PH Le, LTC Tuyen, SR Jian, YC Chung… - Coatings, 2022 - mdpi.com
The correlations among microstructure, surface morphology, hardness, and elastic modulus
of Bi2Te3 thin films deposited on c-plane sapphire substrates by pulsed laser deposition are …