A review is given of techniques to integrate passive and active, optical and optoelectronic,
functions within one photonic circuit. Different platforms have been developed to realize …

Plasmonic nanoantennas can generate high-intensity electric fields in a very small area.
However, being passive devices, they need to be excited by external laser sources. The …

We investigated quantum well intermixing (QWI) using proton implantation to form the carrier
confinement structure in the active layer of a vertical-cavity surface-emitting laser (VCSEL) …

We report a proton irradiation-induced intermixing on InGaAs/GaAs quantum well (QW)
heterostructures with thick upper cladding layers. Proton irradiation was performed with …

Band parameters of group III-V compound semiconductors GaAs, InAs and InP are fitted.
Because of the random distribution of elements from the same group within the alloy lattice …

Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different
wells (namely triple wells and five wells embedded) and bulk InGaAs are investigated after …

Band parameters of lll-V compounds are studied theoretically using KP theory which
accounts for inversion asymmetry of the material. The energy dependence of the electron …