Asymmetric error correction and flash-memory rewriting using polar codes
We propose efficient coding schemes for two communication settings: 1) asymmetric
channels and 2) channels with an informed encoder. These settings are important in non …
channels and 2) channels with an informed encoder. These settings are important in non …
Improving MLC flash performance and endurance with extended P/E cycles
F Margaglia, A Brinkmann - 2015 31st Symposium on Mass …, 2015 - ieeexplore.ieee.org
The traditional usage pattern for NAND flash memory is the program/erase (P/E) cycle: the
flash pages that make a flash block are all programmed in order and then the whole flash …
flash pages that make a flash block are all programmed in order and then the whole flash …
Channel coding methods for non-volatile memories
Non-volatile memories (NVMs) have emerged as the primary replacement of hard-disk
drives for a variety of storage applications, including personal electronics, mobile computing …
drives for a variety of storage applications, including personal electronics, mobile computing …
Rewriting flash memories by message passing
This paper constructs WOM codes that combine rewriting and error correction for mitigating
the reliability and the endurance problems in flash memory. We consider a rewriting model …
the reliability and the endurance problems in flash memory. We consider a rewriting model …
Explicit capacity achieving codes for defective memories
H Mahdavifar, A Vardy - 2015 IEEE International Symposium …, 2015 - ieeexplore.ieee.org
The problem of constructing error correcting codes for defective memories, where some of
the cells are defected and unable to switch their states, is considered. This is a classical …
the cells are defected and unable to switch their states, is considered. This is a classical …
Novel ECC structure and evaluation method for NAND flash memory
J Xiao-bo, T Xue-qing, H Wei-pei - 2015 28th IEEE …, 2015 - ieeexplore.ieee.org
The evaluation of error correction code (ECC) for NAND flash memory is increasingly
complicated by the increasing bit error rate in memory. The concept of error-free information …
complicated by the increasing bit error rate in memory. The concept of error-free information …
Error correction and partial information rewriting for flash memories
This paper considers the partial information rewriting problem for flash memories. In this
problem, the state of information can only be updated to a limited number of new states, and …
problem, the state of information can only be updated to a limited number of new states, and …
Novel reliability evaluation method for NAND flash memory
J Xiao-bo, T Xue-qing, H Wei-pei - TENCON 2015-2015 IEEE …, 2015 - ieeexplore.ieee.org
The evaluation of error correction code (ECC) for NAND flash memory is increasingly
complicated by the increasing bit error rate in memory. The concept of error-free information …
complicated by the increasing bit error rate in memory. The concept of error-free information …
Rewriting flash memories by message passing
Disclosed are constructions of WOM codes that combine rewriting and error correction for
mitigating the reliability and the endurance problems typically experienced with flash …
mitigating the reliability and the endurance problems typically experienced with flash …
[图书][B] Methods in Polar Coding
N Presman - 2015 - researchgate.net
This thesis deals with problems related to polar codes design and implementation. We study
three topics in this area: recursive descriptions of polar codes and their related algorithms …
three topics in this area: recursive descriptions of polar codes and their related algorithms …