A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
B Fu, Z Jia, W Mu, Y Yin, J Zhang… - Journal of …, 2019 - iopscience.iop.org
As a wide-bandgap semiconductor (WBG), β-Ga 2 O 3 is expected to be applied to power
electronics and solar blind UV photodetectors. In this review, defects in β-Ga 2 O 3 single …
electronics and solar blind UV photodetectors. In this review, defects in β-Ga 2 O 3 single …
Semiconductor-metal nanoparticle molecules: Hybrid excitons and the nonlinear Fano effect
W Zhang, AO Govorov, GW Bryant - Physical review letters, 2006 - APS
Modern nanotechnology opens the possibility of combining nanocrystals of various
materials with very different characteristics in one superstructure. Here we study theoretically …
materials with very different characteristics in one superstructure. Here we study theoretically …
Dynamic drag of edge dislocation by circular prismatic loops and point defects
VV Malashenko - Physica B: Condensed Matter, 2009 - Elsevier
Dynamic drag of edge dislocation by circular prismatic loops and point defects -
ScienceDirect Skip to main contentSkip to article Elsevier logo Journals & Books Search …
ScienceDirect Skip to main contentSkip to article Elsevier logo Journals & Books Search …
Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi
We report the formation and phase transformation of Bi-containing clusters in $\text
{GaA}{{\text {s}} _ {1-x}} $ Bi $ _ {x} $ epilayers upon annealing. The $\text {GaA}{{\text {s}} …
{GaA}{{\text {s}} _ {1-x}} $ Bi $ _ {x} $ epilayers upon annealing. The $\text {GaA}{{\text {s}} …
Generation of misfit dislocations in a core-shell nanowire near the edge of prismatic core
The misfit strain relaxation via generation of partial and perfect misfit dislocations and their
dipoles at the interface in core-shell nanowires with faceted cores is considered. The core …
dipoles at the interface in core-shell nanowires with faceted cores is considered. The core …
Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial
N Bert, V Ushanov, L Snigirev, D Kirilenko, V Ulin… - Materials, 2022 - mdpi.com
AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were
successfully grown by low-temperature (200° C) MBE. To overcome the well-known problem …
successfully grown by low-temperature (200° C) MBE. To overcome the well-known problem …
Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method
Y Liu, Z Jin, L Li, N Xia, H Zhuang, D Yang - Micro and Nanostructures, 2023 - Elsevier
Two types of micron-sized etching pits were observed on (100) plane of β-Ga 2 O 3 single
crystals grown by casting method. Type A etching pits were elongated along [010] direction …
crystals grown by casting method. Type A etching pits were elongated along [010] direction …
[HTML][HTML] Analytical elastic models of finite cylindrical and truncated spherical inclusions
We develop a new technique for finding elastic fields for axisymmetric dilatational inclusions
(DIs) in the forms of finite cylinder and truncated sphere, when the DIs and surrounding …
(DIs) in the forms of finite cylinder and truncated sphere, when the DIs and surrounding …
Secondary phase particles in cesium lead bromide perovskite crystals: An insight into the formation of matrix-controlled inclusion
Y Cheng, Q Sun, P Zhang, F Wang… - The Journal of …, 2020 - ACS Publications
The metal halide perovskite CsPbBr3 bulk crystals present electrical and optical
performance discrepancy since the grown-in defects. Here, we first report the well-defined …
performance discrepancy since the grown-in defects. Here, we first report the well-defined …
Semiconductor-metal nanoparticle molecules in a magnetic field: Spin-plasmon and exciton-plasmon interactions
AO Govorov - Physical Review B—Condensed Matter and Materials …, 2010 - APS
Excitons and plasmons in hybrid semiconductor-metal nanostructures strongly interact via
the Coulomb forces. Simultaneously, excitons in semiconductors experience typically strong …
the Coulomb forces. Simultaneously, excitons in semiconductors experience typically strong …