A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …

JA Spencer, AL Mock, AG Jacobs, M Schubert… - Applied Physics …, 2022 - pubs.aip.org
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

[HTML][HTML] Growth of bulk β-Ga2O3 single crystals by the Czochralski method

Z Galazka - Journal of Applied Physics, 2022 - pubs.aip.org
The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3

Y Wang, J Su, Z Lin, J Zhang, J Chang… - Journal of Materials …, 2022 - pubs.rsc.org
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions

M Bosi, P Mazzolini, L Seravalli… - Journal of Materials …, 2020 - pubs.rsc.org
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …

Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials

J Zhao, J Byggmästar, H He, K Nordlund… - npj Computational …, 2023 - nature.com
Ga2O3 is a wide-band gap semiconductor of emergent importance for applications in
electronics and optoelectronics. However, vital information of the properties of complex …

Disorder-induced ordering in gallium oxide polymorphs

A Azarov, C Bazioti, V Venkatachalapathy… - Physical Review Letters, 2022 - APS
Polymorphs are common in nature and can be stabilized by applying external pressure in
materials. The pressure and strain can also be induced by the gradually accumulated …

Orthorhombic undoped κ-Ga 2 O 3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

M Girolami, M Bosi, V Serpente, M Mastellone… - Journal of Materials …, 2023 - pubs.rsc.org
Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …

Defect-characterized phase transition kinetics

X Zhang, J Zhang, H Wang, J Rogal, HY Li… - Applied physics …, 2022 - pubs.aip.org
Phase transitions are a common phenomenon in condensed matter and act as a critical
degree of freedom that can be employed to tailor the mechanical or electronic properties of …

Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3

J García-Fernández, SB Kjeldby, PD Nguyen… - Applied Physics …, 2022 - pubs.aip.org
Ion implantation induced phase transformation and the crystal structure of a series of ion
implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution …