A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …
to its critical applications, especially in safety and space detection. A DUV photodetector …
[HTML][HTML] Growth of bulk β-Ga2O3 single crystals by the Czochralski method
Z Galazka - Journal of Applied Physics, 2022 - pubs.aip.org
The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials
Ga2O3 is a wide-band gap semiconductor of emergent importance for applications in
electronics and optoelectronics. However, vital information of the properties of complex …
electronics and optoelectronics. However, vital information of the properties of complex …
Disorder-induced ordering in gallium oxide polymorphs
Polymorphs are common in nature and can be stabilized by applying external pressure in
materials. The pressure and strain can also be induced by the gradually accumulated …
materials. The pressure and strain can also be induced by the gradually accumulated …
Orthorhombic undoped κ-Ga 2 O 3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors
Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …
Defect-characterized phase transition kinetics
Phase transitions are a common phenomenon in condensed matter and act as a critical
degree of freedom that can be employed to tailor the mechanical or electronic properties of …
degree of freedom that can be employed to tailor the mechanical or electronic properties of …
Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3
J García-Fernández, SB Kjeldby, PD Nguyen… - Applied Physics …, 2022 - pubs.aip.org
Ion implantation induced phase transformation and the crystal structure of a series of ion
implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution …
implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution …